Low temperature μc-Si film growth using a CaF2 seed layer

Kim, D.Y.; Ahn, Byeong-Jae; Moon, Seongin; Won, Chang-Sub; Yi, Junsin

doi:10.1016/s0927-0248(01)00032-0

Cited by 11 publications

(7 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The strong diffraction peaks appeared for both pure and RE doped alkaline earth fluorides films. Especially, the CaF 2 films showed a much strong diffraction on (2 2 0), and this is connected with the relationship between the formation energy and substrate temperature [15].…”

Section: Vacuum Deposited Filmsmentioning

confidence: 71%

Luminescence studies of the rare earth ions-doped CaF2 and MgF2 films for wavelength conversion

Hong

Kawano

2006

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Vacuum Deposited Filmsmentioning

confidence: 71%

Luminescence studies of the rare earth ions-doped CaF2 and MgF2 films for wavelength conversion

Hong

Kawano

2006

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Lattice mismatch between CaF 2 and Si is only 0.6% at room temperature and 1.6% at 600 °C, so CaF 2 thin films can be used as growth templates for crystalline silicon , and as buffer layers for epitaxial layers on silicon, e.g., Fe 3 Si/CaF 2 /Si(111), α-Fe/CaF 2 /Si(111), , Fe/Cu/CaF 2 /Si(111), CeO 2 /CaF 2 /Si(111), ZnO/CaF 2 /Si(111), diamond/Ir/CaF 2 /Si(111), Cu/CaF 2 /Si(111), Al,Cu/CaF 2 /Si(111), Co/CaF 2 (110)/Si(001), and MnF 2 /CaF 2 /Si(111) . Epitaxial CaF 2 thin films have been deposited not only onto Si but also onto copper …”

Section: Introductionmentioning

confidence: 99%

“…Mainly physical vapor deposition techniques have been used for the production of CaF 2 thin films, e.g., molecular beam epitaxy (MBE), ,,,,− electron-beam evaporation (EBE), ,− thermal evaporation, ,− r.f. magnetron sputtering, and pulsed laser deposition .…”

Section: Introductionmentioning

confidence: 99%

Novel ALD Process for Depositing CaF₂ Thin Films

et al. 2007

View full text Add to dashboard Cite

Metal fluorides, like CaF 2 , are interesting dielectric materials which are optically transparent over a wide wavelength range down to the vacuum ultraviolet regime. In addition, CaF 2 has a low refractive index and is therefore an attractive material for optical filters. In this study thin films of calcium fluoride were deposited by atomic layer deposition (ALD) at a temperature range of 300-450 °C using TiF 4 as a new convenient fluoride precursor. Ca(thd) 2 was used as a calcium precursor. Films were analyzed by X-ray diffraction/reflection (XRD/XRR), field emission scanning electron microscopy (FESEM), timeof-flight elastic recoil detection analysis (TOF-ERDA), and UV-vis spectrophotometer. The growth rate of the film was 1.6 Å/cycle, which is 4 times higher than that published before for CaF 2 ALD. All films were polycrystalline and the impurity levels were low. The refractive index was 1.43 and the permittivity 6.6. This novel ALD process using the new fluoride precursor TiF 4 is likely more general and applicable also to other metal fluorides.

show abstract

“…In the present work, we focus on the creation of biaxial CaF 2 films using the oblique angle deposition technique on Si wafers covered with a layer of amorphous native oxide. CaF 2 has been known as an excellent buffer layer material for the growth of a variety of semiconductor materials including Si [10][11][12][13][14] and compound semiconductors [15][16][17]. The heteroepitaxial structures with CaF 2 have promising applications in many advanced devices [14], such as resonant tunneling diodes [12] and electrooptical modulators [14,18].…”

Section: Introductionmentioning

confidence: 99%