Low-Threshold pentacene OTFT by using NdTaON gate dielectric and ITO gate electrode

High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

“…14 This is because charge carriers induced in the IGZO TFT with high- k dielectrics can increase the effective mobility with an increase in the applied gate bias. 15 However, in this study, high mobility IGZO TFTs with conventional SiO 2 gate dielectrics operating at 5 V were realized. As shown in Fig.…”