Low-threshold photonic crystal laser

Abstract

We have fabricated photonic crystal nanocavity lasers, based on a high-quality factor design that incorporates fractional edge dislocations. Lasers with InGaAsP quantum well active material emitting at 1550 nm were optically pumped with 10 ns pulses, and lased at threshold pumping powers below 220 W, the lowest reported for quantum-well based photonic crystal lasers, to our knowledge. Polarization characteristics and lithographic tuning properties were found to be in excellent agreement with theoretical predictions.

Random nanolasing in the Anderson localized regime

“…An asymmetric threshold distribution with a long tail extending to high threshold values is obtained, as predicted by theory 28 , in contrast to the symmetric threshold distributions observed for diffusive random lasers 29 . The average threshold of 418 mW is comparable to the typical threshold of standard photonic-crystal lasers pumped in a similar geometry 23,30 and is 20 times lower than the threshold measured for a macroscopically structured one-dimensional disordered medium in the localized regime 17 . The b-factor and modevolume distributions are plotted in Fig.…”

Ultrafast photonic crystal nanocavity laser

“…Besides the dramatically enhanced small-and large-signal modulation speeds, the QED-enhanced lasers can also significantly improve power consumption [13][14][15][16][17]23 and associated thermal problems. The large β reduces the threshold power of the laser 23 .…”

“…Cavities introduced into the photonic crystal can have extremely high Q/V mode ratios, and therefore can enable large Purcell factors. So far, such nanocavities have been used for cavity quantum electrodynamic (QED) experiments 4-12 such as SE rate enhancement 4,5,9-11 and suppression 4 , and also for single-photon sources 4,12 and lower-threshold lasers [13][14][15][16][17] . Here, we demonstrate extremely fast photonic crystal nanocavity lasers with response times below the 2 ps detection limit of our measurement apparatus.…”

Mid-Infrared Surface-Emitting Two Dimensional Photonic Crystal Semiconductor Lasers

“…After that, this type of semiconductor lasers has been developed rapidly in near IR region. (Park, Hwang, Huh, Ryu, & Lee, 2001;Loncar, Yoshie, Scherer, Gogna, & Qiu, 2002;Altug, Englund, & Vuckovic, 2006) Unfortunately, mainly restricted by the etch-induced surface recombination, the research development of 2D photonic crystal semiconductor lasers in mid-IR range of electromagnetic spectrum was relatively slow. Even so, due to their intrinsic advantages addressed previously, this type of lasers operating in mid-IR range is still very desirable.…”