Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers

“…[1][2][3][4][5][6][7][8][9][10][11][12] Less temperature sensitivity in InGaAsN QW lasers, at ϭ1300 nm, has also been demonstrated in many of the published results. [1][2][3][4][5][6][7][8][9][10][11][12] Although the area of temperature sensitivity in InGaAsN QW lasers is still under extensive investigation, 13,14 promising results of both low threshold-current-density (J th ) and high T 0 values ͓1/T 0 ϭ(1/J th )dJ th /dT͔ have been demonstrated. 3,6,12 Recently, efforts to achieve high performance InGaAsN QW lasers by metalorganic chemical vapor deposition ͑MOCVD͒ 3-7 have been pursued.…”

“…The advantage of the MOCVD-grown InGaAsN QW lasers is the ease in growing high quality AlAs/GaAs distributed Bragg reflectors by MOCVD, compared to molecular beam epitaxy ͑MBE͒ techniques, for realizing low-cost VCSELs. Only recently, MOCVD-grown InGaAsN QW lasers, [3][4][5][6][7] at ϭ1300 nm, have demonstrated comparable performances with the MBEgrown InGaAsN QW lasers. [8][9][10][11][12] As shown in our earlier studies, 3 tensile-strained buffer layers ͑InGaPϩGaAsP͒ are crucial for achieving highly strained InGaAs͑N͒ QW lasers grown on thick, highAl-content ͑75%-85%͒ AlGaAs lower cladding layers.…”

“…Only recently, MOCVD-grown InGaAsN QW lasers, [3][4][5][6][7] at ϭ1300 nm, have demonstrated comparable performances with the MBEgrown InGaAsN QW lasers. [8][9][10][11][12] As shown in our earlier studies, 3 tensile-strained buffer layers ͑InGaPϩGaAsP͒ are crucial for achieving highly strained InGaAs͑N͒ QW lasers grown on thick, highAl-content ͑75%-85%͒ AlGaAs lower cladding layers. In the present work, we report very low threshold (J th )-and transparency (J th )-current-density, strain-compensated In 0.4 Ga 0.6 As 0.995 N 0.005 QW lasers with high current injection efficiency ( inj ) by utilizing strain compensation from GaAsP tensile-strained barriers and a thin GaAsP tensilestrained buffer layer.…”

“…3 The tensile buffer for this structure consists of a 30-Å GaAs 0.67 P 0.33 layer, which eliminates the poor interface of the InGaP-GaAs in our earlier structures. 3 One of the challenges in growing InGaAsN QW lasers by MOCVD is due to the difficulties in incorporating N into the InGaAs QW, while maintaining a high optical quality film. The low purity of the N precursor used in MOCVD ͑U-DMHy͒ is also suspected as a possible reason for the low optical quality of MOCVD-grown InGaAsN QWs.…”

“…[1][2][3][4][5][6][7][8][9][10][11][12] Although the area of temperature sensitivity in InGaAsN QW lasers is still under extensive investigation, 13,14 promising results of both low threshold-current-density (J th ) and high T 0 values ͓1/T 0 ϭ(1/J th )dJ th /dT͔ have been demonstrated. 3,6,12 Recently, efforts to achieve high performance InGaAsN QW lasers by metalorganic chemical vapor deposition ͑MOCVD͒ 3-7 have been pursued. The advantage of the MOCVD-grown InGaAsN QW lasers is the ease in growing high quality AlAs/GaAs distributed Bragg reflectors by MOCVD, compared to molecular beam epitaxy ͑MBE͒ techniques, for realizing low-cost VCSELs.…”