Low turn-on voltage rectifier using p-GaN gate AlGaN/GaN high electron mobility transistor for energy harvesting applications

Abstract

We have demonstrated an extremely low voltage rectifier by using p-GaN gate AlGaN/GaN high electron mobility transistors. In contrast to conventional GaN rectifiers, the turn-on voltage and on-state current can be decoupled, resulting in low turn-on voltage of 0.05 V and high on-state current achieved simultaneously with p-GaN designs. Furthermore, the role of p-GaN layer on current–voltage characteristics of p-GaN gated anode diode was investigated, indicating the p-GaN layer is the source of hole current. Combined the electron current with hole current, the total current was enhanced significantly with the ohmic p-GaN gate electrode. Finally, full-wave AC to DC rectification was demonstrated by a monolithically-integrated diode bridge rectifier with four p-GaN gated anode diodes. The bridge rectifier is able to operate at an input signal as low as 0.18 V, which is very promising for future power conversion applications.

Breakdown voltage enhancement of p-GaN/AlGaN/GaN diode by controlling Mg acceptors for compensating residual Si donors

“…In the low voltage region at higher than the on-voltage of the 2DEG channel, the forward current is dominated by 2DEG. 17,18) With further increase of voltage, the pn diode between anode and cathode of the p-GaN region acts as a main current path, and enhances the forward current significantly. Therefore, the p-GaN gated anode diodes with the SJ structure are expected to realize the high V B , as well as the low R on and the high forward current.…”

“…The p-GaN gated anode diode is the structure with the anode, connecting the p-GaN gate electrode and the one side of the channel electrode, and the other side of the channel electrode as the cathode. 17,18) Inside the p-GaN region, the channel electrode of the anode was formed on the AlGaN layer, where the p-GaN layer was removed. And, the channel electrode is connected to the p-GaN gate electrode by Au/Ti.…”