Low-voltage complementary inverters based on ion gel-gated ReS2 and BP transistors

Kim, Jun Beom; Choi, Yongsuk; Dathbun, Ajjiporn; Kim, Seongchan; Lim, Dongun; Hong, Panuk; Cho, Jeong Ho

doi:10.1016/j.flatc.2017.06.009

Cited by 8 publications

(9 citation statements)

References 60 publications

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“…We find that Density Functional Theory calculations can replicate the observed Raman spectra for the bulk and for the monolayers concluding that all active Raman modes belong to the A g irreducible representation given that inversion is the only symmetry operation compatible with its structure. We also show that the ambipolarity of ReSe 2 opens up interesting opportunities for complementary logic electronics: for instance, we demonstrate that it is easy to produce very simple, gate-voltage controlled AC-voltage phase modulators as previously reported for ReS 2 24 .…”

Section: Introductionsupporting

confidence: 70%

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Pradhan

García

Isenberg

et al. 2018

Sci Rep

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We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrier mobilities in excess of 102 cm2/Vs at room temperature in crystals with nearly ~10 atomic layers. These thicker FETs also show nearly zero threshold gate voltage for conduction and high ON to OFF current ratios when compared to the FETs built from thinner layers. We also demonstrate that it is possible to utilize this ambipolarity to fabricate logical elements or digital synthesizers. For instance, we demonstrate that one can produce simple, gate-voltage tunable phase modulators with the ability to shift the phase of the input signal by either 90° or nearly 180°. Given that it is possible to engineer these same elements with improved architectures, for example on h-BN in order to decrease the threshold gate voltage and increase the carrier mobilities, it is possible to improve their characteristics in order to engineer ultra-thin layered logic elements based on ReSe2.

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Section: Introductionsupporting

confidence: 70%

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Pradhan

García

Isenberg

et al. 2018

Sci Rep

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“…E, Fabrication procedure of the complementary inverter based on n‐type ReS 2 and p‐type black phosphorus (BP) transistors with ion gel gate dielectrics. Reproduced with permission from Reference 177. F, Schematic for CMOS inverter via IJP and LA.…”

Section: Synthesized Tmdcs For Electronicsmentioning

confidence: 99%

“…Dathbun et al 84 reported the fabrication of transistors and logic gate using graphene as source‐drain electrodes, ReS 2 as channel materials and ion gel as gate dielectric materials. Kim et al 177 demonstrated the preparation of low‐voltage complementary inverters based on transistors made of ion gel‐gated 2D materials. Figure 12E shows the fabrication procedure of the complementary inverter based on n‐type ReS 2 and p‐type BP transistors with ion gel gate dielectrics.…”

Section: Synthesized Tmdcs For Electronicsmentioning

confidence: 99%

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

Xiao

Zeng

et al. 2020

InfoMat

124

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Tremendous efforts have been devoted to preparing the ultrathin two‐dimensional (2D) transition‐metal dichalcogenides (TMDCs) and TMDCs‐based heterojunctions owing to their unique properties and great potential applications in next generation electronics and optoelectronics over the past decade. However, to fulfill the demands for practical applications, the batch production of 2D TMDCs with high quality and large area at the mild conditions is still a challenge. This feature article reviews the state‐of‐the‐art research progresses that focus on the preparation and the applications in electronics and optoelectronics of 2D TMDCs and their van der Waals heterojunctions. First, the preparation methods including chemical and physical vapor deposition growth are comprehensively outlined. Then, recent progress on the application of fabricated 2D TMDCs‐based materials is revealed with particular attention to electronic (eg, field effect transistors and logic circuits) and optoelectronic (eg, photodetectors, photovoltaics, and light emitting diodes) devices. Finally, the challenges and future prospects are considered based on the current advance of 2D TMDCs and related heterojunctions.

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“…[ 16 ] This is attributed to achievement for fulfilling key requirements such as low‐power demonstration with high span of ring oscillation frequency during visible light illumination, with high density of circuits which renders LTF circuit efficient in terms of area density associated with 2D semiconductors of ReS 2 layers. However, there are limited reports to utilize emerging ReS 2 thin film transistors for the application of novel circuits combined with well‐established Si or next‐generation devices, [ 17,18 ] for example, SWNT FETs.…”

Section: Figurementioning

confidence: 99%

“…ReS 2 layers. However, there are limited reports to utilize emerging ReS 2 thin film transistors for the application of novel circuits combined with well-established Si or next-generation devices, [17,18] for example, SWNT FETs.…”

mentioning

confidence: 99%

Photosensitive Complementary Inverters Composed of n‐Channel ReS₂ and p‐Channel Single‐Walled Carbon Nanotube Field‐Effect Transistors

Jeong

Seo

Kim

et al. 2020

Physica Rapid Research Ltrs

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With a surge of necessity on versatile Internet of Things (IoTs) sensors for the upcoming era of trillion sensors, [1-4] security and low-power consumption issues are key aspects among the various figures-of-merit which are required for emerging IoT sensor systems built with a variety of sensors such as photodetectors, gyroscopes, gas sensors, temperature sensors, and others. In a recent past, among a variety of sensors developed, one of the predominant research activities has been focused on the development of energy-efficient photodetectors with high level of security due to high demand for the application of highresolution image sensors, which are essentially required to be built in mobile gadgets including smart phones, car navigators,

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Low-voltage complementary inverters based on ion gel-gated ReS2 and BP transistors

Cited by 8 publications

References 60 publications

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

Photosensitive Complementary Inverters Composed of n‐Channel ReS₂ and p‐Channel Single‐Walled Carbon Nanotube Field‐Effect Transistors

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Low-voltage complementary inverters based on ion gel-gated ReS2 and BP transistors

Cited by 8 publications

References 60 publications

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics

Photosensitive Complementary Inverters Composed of n‐Channel ReS2 and p‐Channel Single‐Walled Carbon Nanotube Field‐Effect Transistors

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Product

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About

Photosensitive Complementary Inverters Composed of n‐Channel ReS₂ and p‐Channel Single‐Walled Carbon Nanotube Field‐Effect Transistors