Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices

Moldovan, Grigore; Kazemian, P.; Edwards, P. R.; Ong, Venetia; Kurniawan, Oka; Humphreys, C. J.

doi:10.1016/j.ultramic.2006.10.002

Cited by 24 publications

(16 citation statements)

References 11 publications

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“…46 However, in the case of wire devices the evaluation of depletion width is relevant to estimate the unknown doping levels. Ebeam energy has therefore to be chosen low-enough to allow the accurate determination of W. For this reason, 4 keV ebeam was found to provide a fair spatial resolution while providing sufficient signalto-noise level.…”

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confidence: 99%

Direct Imaging of p–n Junction in Core–Shell GaN Wires

et al. 2014

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While core−shell wire-based devices offer a promising path toward improved optoelectronic applications, their development is hampered by the present uncertainty about essential semiconductor properties along the threedimensional (3D) buried p−n junction. Thanks to a crosssectional approach, scanning electron beam probing techniques were employed here to obtain a nanoscale spatially resolved analysis of GaN core−shell wire p−n junctions grown by catalyst-free metal−organic vapor phase epitaxy on GaN and Si substrates. Both electron beam induced current (EBIC) and secondary electron voltage constrast (VC) were demonstrated to delineate the radial and axial junction existing in the 3D structure. The Mg dopant activation process in p-GaN shell was dynamically controlled by the ebeam exposure conditions and visualized thanks to EBIC mapping. EBIC measurements were shown to yield local minority carrier/exciton diffusion lengths on the p-side (∼57 nm) and the n-side (∼15 nm) as well as depletion width in the range 40−50 nm. Under reverse bias conditions, VC imaging provided electrostatic potential maps in the vicinity of the 3D junction from which acceptor N a and donor N d doping levels were locally determined to be N a = 3 × 10 18 cm −3 and N d = 3.5 × 10 18 cm −3 in both the axial and the radial junction. Results from EBIC and VC are in good agreement. This nanoscale approach provides essential guidance to the further development of core−shell wire devices.

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Direct Imaging of p–n Junction in Core–Shell GaN Wires

et al. 2014

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“…The Electron-Beam Induced Current (EBIC) technique is commonly used to determine L in semiconductors [4][5][6][7]. Currently, there are various methods and models of extracting L from measurements [1,2,[8][9][10].…”

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confidence: 99%

“…1 Introduction Minority carrier transport properties such as diffusion length, L, and recombination lifetime, τ, are critical parameters that affect the operating characteristics of semiconductor devices. The Electron-Beam Induced Current (EBIC) technique is commonly used to determine L in semiconductors [4][5][6][7]. Currently, there are various methods and models of extracting L from measurements [1,2,[8][9][10].…”

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Investigation of the extraction of short diffusion lengths from simulated electron‐beam induced current

Wee

Parish

Nener

2010

Phys. Status Solidi (c)

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This paper reports on the investigations via 2‐D simulation into the accuracy of diffusion length extraction from scanning electron‐beam induced current measurements when the diffusion length, L is very short. L is extracted by using the direct method proposed by Chan et al. [1] and later refined by Kurniawan and Ong [2] to take finite junction depth into account. The 2‐D simulations were undertaken using Synopsys® Sentaurus TCAD and a realistic electron‐hole pair generation volume was created using CASINO v2.42 [3], a Monte Carlo Scanning Electron Microscope interaction simulation software, and imported into Sentaurus. The voltage and diameter of the electron beam and diffusion length and surface recombination velocity of the semiconductor materials were varied in the simulations to determine the errors in the diffusion length extracted from the EBIC signals as a function of these parameters. The results of the simulation show that the accuracy of the method proposed in [1] is reasonably accurate and that the beam voltage and spot size do not have significant effects on the accuracy (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The dislocation behavior in In-GaN/GaN multiple quantum well (MQW) light emitting structures is more complex and is not totally clear up to now. Thus, the dark EBIC contrast was observed on dislocations intersecting MQW layer [8] that demonstrates their recombination activity, while as shown in [9][10][11] dislocations in MQW structures can produce the bright EBIC contrast, which was explained by the enhanced excess carrier transport through MQWs along threading extended defects.…”

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confidence: 89%

Role of extended defects in the transformation of InGaN/GaN multiple quantum well structure optical properties under low energy electron beam irradiation

Вергелес

Shmidt

Yakimov

2012

Phys. Status Solidi C

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It is shown that threading extended defects can enhance the excess carrier transport through the InGaN/GaN multiple quantum well (MQW) region. The enhanced excess carrier transport through a GaN film is also revealed that was explained by a carrier transport along extended defects. A possible role of threading extended defects in the low energy electron beam irradiation induced modification of electrical and optical properties in InGaN/GaN MQW structures are discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices

Cited by 24 publications

References 11 publications

Direct Imaging of p–n Junction in Core–Shell GaN Wires

Direct Imaging of p–n Junction in Core–Shell GaN Wires

Investigation of the extraction of short diffusion lengths from simulated electron‐beam induced current

Role of extended defects in the transformation of InGaN/GaN multiple quantum well structure optical properties under low energy electron beam irradiation

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