Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin Al<sub>x</sub>O<sub>y</sub>

Cai, Wensi; Zhang, Jiaye; Wilson, Joshua; Song, Aimin

doi:10.1109/led.2019.2924714

Cited by 24 publications

(10 citation statements)

References 30 publications

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“…In parallel research, Chen et al proposed high performance, low voltage ZnO TFTs employing 100 nm Al 2 O 3 deposited by DC magnetron sputtering as the gate dielectric [51]. The minimum operating voltage of the proposed devices was 4 V, but due to the thick Al 2 O 3 , the transistors could not be operated with lower V GS .In 2017, Cai et al reported 1 V IGZO TFTs that employed a 3 nm thick solution processed anodic Al 2 O 3 [52]. The demonstrated devices operated at 1 V, had on/off current ratios larger than 10 5 , displayed field-effect mobilities of around 5.4 cm 2 / VÁs, and possessed subthreshold swing of 68 mV/dec, which is close to the theoretical limit of SS at 300 K. In 2018, Ma et al proposed low voltage IGZO TFTs using a 5nmAl 2 O 3 dielectric that resulted in transistors operating at 0.6 V [53].…”

Section: Aluminum Oxide (Al 2 O 3 )mentioning

confidence: 99%

High Capacitance Dielectrics for Low Voltage Operated OFETs

Mohammadian¹,

Majewski²

2020

Integrated Circuits/Microchips

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Low-voltage, organic field-effect transistors (OFETs) have a high potential to be key components of low-cost, flexible, and large-area electronics. However, to be able to employ OFETs in the next generation of the electronic devices, the reduction of their operational voltage is urgently needed. Ideally, to be power efficient, OFETs are operated with gate voltages as low as possible. To fulfill this requirement, low values of transistor threshold voltage (V t) and subthreshold swing (SS) are essential. Ideally, V t should be around 0 V and SS close to 60 mV/dec, which is the theoretical limit of subthreshold swing at 300 K. This is a very challenging task as it requires the gate dielectric thickness to be reduced below 10 nm. Here, the most promising strategies toward high capacitance dielectrics for low voltage operated OFETs are covered and discussed.

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Section: Aluminum Oxide (Al 2 O 3 )mentioning

confidence: 99%

High Capacitance Dielectrics for Low Voltage Operated OFETs

Mohammadian¹,

Majewski²

2020

Integrated Circuits/Microchips

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“…In particular, tantalum pentoxide (Ta 2 O 5 ) is a very promising candidate due to the high dielectric constant in the bulk (κ bulk ~27) and as a thin-film (κ thin-film ~20). These values are at least two times larger than that of Al 2 O 3 (κ bulk ~9) [10] and five times larger than that of SiO 2 (κ bulk ~3.9). As a result, Ta 2 O 5 has been abundantly used in electrolytic capacitors, DRAM devices, and recently in solution-processed inorganic semiconductor thin-film transistors as a promising gate dielectric for low-power electronics [11].…”

Section: Introductionmentioning

confidence: 99%

One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta2O5 Gate Dielectrics

et al. 2019

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Low-voltage, solution-processed organic thin-film transistors (OTFTs) have tremendous potential to be key components in low-cost, flexible and large-area electronics. However, for these devices to operate at low voltage, robust and high capacitance gate dielectrics are urgently needed. Herein, the fabrication of OTFTs that operate at 1 V is reported. These devices comprise a solution-processed, self-assembled monolayer (SAM) modified tantalum pentoxide (Ta2O5) as the gate dielectric. The morphology and dielectric properties of the anodized Ta2O5 films with and without n-octadecyltrichlorosilane (OTS) SAM treatment have been studied. The thickness of the Ta2O5 film was optimized by varying the anodization voltage. The results show that organic TFTs gated with OTS-modified tantalum pentoxide anodized at 3 V (d ~7 nm) exhibit the best performance. The devices operate at 1 V with a saturation field-effect mobility larger than 0.2 cm2 V−1 s−1, threshold voltage −0.55 V, subthreshold swing 120 mV/dec, and current on/off ratio in excess of 5 × 103. As a result, the demonstrated OTFTs display a promising performance for applications in low-voltage, portable electronics.

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“…The high and low noise margins (NM), which are defined by NM H = V OH – V IH and NM L = V IL – V OL , where V IH , V IL , V OH , and V OL are input and output voltages at high and low levels of ∼0.70 and ∼0.64 V at V DD = 3 V, respectively, which corresponds to ∼47 and ∼43% of V DD /2 (Figure c). The well-balanced NMs are nearly comparable with the best reported oxide NMOS and indicate sufficient allowance for the logic gate applications. , Figure d also shows supply currents ( I DD ) for the presented NMOS inverter as functions of V IN . The static current was ∼4 nA, and the power consumption ( P STAT ), which was defined by P STAT = V DD ( I STAT_low + I STAT_high )/2, was estimated as ∼0.46 μW per logic gate.…”

Section: Results and Discussionmentioning

confidence: 61%

“…The well-balanced NMs are nearly comparable with the best reported oxide NMOS and indicate sufficient allowance for the logic gate applications. 34,35 Figure 6d also shows supply currents (I DD ) for the presented NMOS inverter as functions of V IN . The static current was ∼4 nA, and the power consumption (P STAT ), which was defined by P STAT = V DD (I STAT_low + I STAT_high )/2, was estimated as ∼0.46 μW per logic gate.…”

Section: Resultsmentioning

confidence: 99%

Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

2022

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A cost-effective, vacuum-free, liquid-metal-printed two-dimensional (2D) (∼1.9 nm-thick) tin-doped indium oxide (ITO) thin-film transistor (TFT) was developed at the maximum process temperature of 200 °C. A large-sized 2D-ITO channel layer with an electron density of ∼1.2 × 1019 cm–3 was prepared in an ambient atmosphere. The 2D-ITO-TFT operated in full depletion with a threshold voltage of −2.1 V and demonstrated good TFT device characteristics such as a high saturation mobility of ∼27 cm2 V–1 s–1, a small subthreshold slope of <382 mV decade–1, and a large on/off-current ratio of >109. The TFT device simulation analysis found that the 2D-ITO-TFT performances were controlled by the shallow acceptor-like in-gap defects spreading in the midgap region of over 1.0 eV below the conduction band minimum. Post-thermal annealing tuned the electron density of the 2D-ITO channel and enabled it to produce enhancement and depletion-mode 2D-ITO-TFTs. A full signal swing zero-V GS-load n-type metal–oxide semiconductor (NMOS) inverter composed of depletion-load/enhancement-driver 2D-ITO-TFTs and a complementary inverter with p-channel 2D-SnO-TFT were successfully demonstrated using all 2D-oxide-TFTs.

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Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin Al_xO_y

Cited by 24 publications

References 30 publications

High Capacitance Dielectrics for Low Voltage Operated OFETs

High Capacitance Dielectrics for Low Voltage Operated OFETs

One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta2O5 Gate Dielectrics

Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

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Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin AlxOy

Cited by 24 publications

References 30 publications

High Capacitance Dielectrics for Low Voltage Operated OFETs

High Capacitance Dielectrics for Low Voltage Operated OFETs

One-Volt, Solution-Processed Organic Transistors with Self-Assembled Monolayer-Ta2O5 Gate Dielectrics

Vacuum-Free Liquid-Metal-Printed 2D Indium–Tin Oxide Thin-Film Transistor for Oxide Inverters

Contact Info

Product

Resources

About

Low-Voltage, Full-Swing InGaZnO-Based Inverters Enabled by Solution-Processed, Ultra-Thin Al_xO_y