Low-voltage high-speed antimonide-based compound semiconductor (ABCS) 2-μm InAs/AlSb HEMT MMIC process and its broadband switch application

Abstract

In this paper, we present a low-voltage highspeed antimonide-based compound semiconductor (ABCS) high electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) process and its single-pole doublethrow (SPDT) broadband switch application. The measured 3-dB bandwidth of the proposed SPDT switch is from dc to 30 GHz. The switch features an insertion loss of less than 4 dB, and an isolation of greater than 18 dB between 10 MHz and 30 GHz. The measured input 1 dB compression point (P 1dB ) and thirdorder intercept point (IP3) at 100 MHz are 12.5 and 27 dBm, respectively. The chip size of the proposed switch is 0.75 × 0.58 mm 2 . These results demonstrate the outstanding potential of ABCS HEMT technology for low voltage switch applications.Index Terms -antimonide-based compound semiconductor (ABCS), high electron-mobility transistor (HEMT), monolithic microwave integrated circuit (MMIC), switch.

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition

“…In recent years, the research on antimonide semiconductors has made much progress, such as the applications in a monolithic microwave integrated circuit (MMIC), [1] infrared focal plane array detectors, [2] infrared lasers, [3] quantum-cascade lasers, [4] quantum-dot lasers, [5] quantumwell lasers, [6] thermoelectric devices, [7] thermophotovoltaic devices, [8,9] and resonant tunneling diodes. [10][11][12][13][14] Both GaSb and GaAs are III-V semiconductors, which have the same crystal structure and a type-II band alignment can be developed by the GaSb/GaAs heterostructure.…”