Low-voltage high-speed thin-film-Ge surface PIN photodetectors integrated on Si waveguide

Abstract

In this article, we demonstrate the thin-film-Ge surface PIN photodetectors. With thin Ge layer (∼120 nm including buffer layers), the devices couple well with the incoming Si waveguide and achieve high responsivity due to the surface layout of the highly-doped p+/n+ region. By shrinking the p+/n+ spacing of the device, the device exhibits high speed of ∼20 GHz at the bias of −1 V.

Reduced Pressure-Chemical Vapor Deposition of High Quality Ge Layers on SiGe/Si Superlayers for Microelectronics and Optoelectronics Purposes

“…The possibility of heteroepitaxial growth of pure germanium on silicon substrates has generated wide interest for the development of integrated electronic and optoelectronic devices (1)(2)(3)(4)(5). Due to its superior electron and hole mobility compared to Si, Ge has emerged as a feasible candidate to maintain performance requirements for future electronic applications (1).…”