Low Voltage Operating Field Effect Transistors with Composite In₂O₃–ZnO–ZnGa₂O₄ Nanofiber Network as Active Channel Layer

Abstract

Field effect transistors (FETs), incorporating metal-oxide nanofibers as the active conductive channel, have the potential for driving the widespread application of nanowire or nanofiber FETs-based electronics. Here we report on low voltage FETs with integrated electrospun In2O3-ZnO-ZnGa2O4 composite fiber channel layers and high-K dielectric (MgO)0.3-(Bi1.5Zn1.0Nb1.5O7)0.7 gate insulator and compare their performance against FETs utilizing conductive single phase, polycrystalline ZnO or In2O3 channel layers. The polycrystalline In2O3-ZnO-ZnGa2O4 composite fibers provide superior performance with high field effect mobility (∼7.04 cm2 V(-1) s(-1)), low subthreshold swing (390 mV/dec), and low threshold voltage (1.0 V) combined with excellent saturation, likely resulting from the effective blocking of high current-flow through the In2O3 and ZnO nanocrystallites by the insulating spinel ZnGa2O4 phase. The microstructural evolution of the individual In2O3, ZnO, and ZnGa2O4 phases in composite fibers is clearly observed by high resolution TEM. A systematic examination of channel area coverage, ranging from single fiber to over 90% coverage, demonstrates that low coverage results in relatively low current outputs and reduced reproducibility which we attribute to the difficulty in positioning fibers and fiber length control. On the other hand, those with ∼80% coverage exhibited high field effect mobility, high on/off current ratios (>10(5)), and negligible hysteresis following 15 sweep voltage cycles. A special feature of this work is the application of the FETs to modulate the properties of complex polycrystalline nanocomposite channels.

Self‐Assembly of Perovskite Crystals Anchored Al2O3‐La2O3 Nanofibrous Membranes with Robust Flexibility and Luminescence

“…In fact, inorganic nanofibers are usually almost automatically to collapse, shrinkage, and pore‐forming after the as‐prepared hybrid precursor nanofibers were annealed at high temperature, because of the pyrolyzation of polymer template. Therefore, inorganic nanofibers exhibit crack and brittleness due to their thinner section and the internal stress generated by the shrinkage of the nanofibers . However, in this study, the morphology of Al 2 O 3 ‐La 2 O 3 and Al 2 O 3 nanofibers was kept well after heat treatment due to choosing the appropriate precursor and careful control of the electrospinning and calcination process conditions.…”

Density functional theory study on the effect of Cu- and Na-substituted layers on spin-dependent transport and TMR in the Fe/ZnO/Fe MTJ

“…It is accepted that pure ZnO is a non-magnetic material [10,11]. In the past decade, novel functionalities of ZnO with wurtzite crystalline structure in the electronic, optoelectronic, and spintronic applications have been extensively studied, theoretically and experimentally [12][13][14][15][16].…”

Performance improvement in electrospun InGaZnO nanofibres field-effect-transistors using low thermal budget microwave calcination and Ar/O2 mixed-plasma surface treatment

“…based [9][10][11] . Additionally, compared to vacuum equipment such as sputters, it is advantageous to easily control the composition ratio of IGZO and to deposit large-area at room temperature 11 .…”

“…While IGZO has excellent electrical properties among many oxide semiconductors, electrospun IGZO nanofibres are attractive materials with high flexibility and large specific surface area in one-dimensional (1D) form 12 . However, electrospun IGZO nanofibres require high temperature calcination annealing to vaporize the polymer matrix and high temperature post deposition annealing (PDA) to remove defects in the metal oxides and to improve the electrical properties 9,10,13 . These high temperature thermal processes deliver a large thermal budget to the device, which is the biggest limitation for flexible and stretchable device applications.…”