Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator

Kang, Leeseung; An, Hye Lan; Jung, Seungmin; Kim, Seyul; Nahm, Sahn; Kim, Dae guen; Lee, Chan Gi

doi:10.1016/j.apsusc.2019.01.132

Cited by 18 publications

(11 citation statements)

References 23 publications

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“…Furthermore, we compared the EOT of various solution-processed oxide dielectrics, including HfO 2 , LZO, ZrO 2 , , HfLaO, MgTiO, and Al 2 O 3 , as a function of the processing temperature. , Figure h and Table 2 in the Supporting Information indicate that the quasi-2D Sr 1.8 Bi 0.2 Nb 3 O 10 nanosheets with high dielectric constants achieve a low EOT of 8 nm at a processing temperature below 250 °C. This value of EOT is significantly lower than that of other solution-processed oxide dielectrics.…”

Section: Resultsmentioning

confidence: 99%

All-Solution-Processed High-Performance MoS₂ Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Joung,

Yim,

Lee

et al. 2024

ACS Nano

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Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing largescale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solutionprocessed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS 2 ) as the channel and Dion−Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS 2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm 2 V -1 s -1 ) and an on/off ratio exceeding 10 6 . Additionally, the use of a high-k dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10 −11 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.

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Section: Resultsmentioning

confidence: 99%

All-Solution-Processed High-Performance MoS₂ Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Joung,

Yim,

Lee

et al. 2024

ACS Nano

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“…In order to decompose the TBA + ions still present on the surface of the nanosheet after LB deposition, the films were irradiated by UV white light after every deposition step, as illustrated in Figure 3 e. The leakage current decreased upon increase of the numbers of Ca 2 Nb 3 O 10 (CNO) monolayers in the device structure. Similarly, Kang et al [39] reported a CdS thin-film transistor using a 10-layer CNO nanosheet-based thin film as a gate insulator. The same type of CNO nanosheet films are also used in organic light-emitting devices (OLED).…”

Section: Lb Multilayer Films and Heterostructuresmentioning

confidence: 94%

Metal Oxide Nanosheets as 2D Building Blocks for the Design of Novel Materials

Timmerman

Xia

et al. 2020

Chemistry A European J

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Research into 2‐dimensional materials has soared during the last couple of years. Next to van der Waals type 2D materials such as graphene and h‐BN, less well‐known oxidic 2D equivalents also exist. Most 2D oxide nanosheets are derived from layered metal oxide phases, although few 2D oxide phases can be also made by bottom‐up solution syntheses. Owing to the strong electrostatic interactions within layered metal oxide crystals, a chemical process is usually needed to delaminate them into their 2D constituents. This Review article provides an overview of the synthesis of oxide nanosheets, and methods to assemble them into nanocomposites, mono‐ or multilayer films. In particular, the use of Langmuir–Blodgett methods to form monolayer films over large surface areas, and the emerging use of ink jet printing to form patterned functional films is emphasized. The utilization of nanosheets in various areas of technology, for example, electronics, energy storage and tribology, is illustrated, with special focus on their use as seed layers for epitaxial growth of thin films, and as electrochemically active electrodes for supercapacitors and Li ion batteries.

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“…In most cases, tetrabutylammonium hydroxide (TBAOH) is a famous solvent for the fabrication of Ca 2 Nb 3 O 10 − nanosheets in the liquid phase exfoliation method because TBAOH is classified as a bulky molecule. [45][46][47] Sakaki et al investigated the use of tetramethylammonium hydroxide, TBAOH, and dimethylaminoethanol as an exfoliation agent in order to observe osmotic swelling of layered perovskite niobite. 48 Besides, Han et al studied the use of cationic amino undecanoic acid (H 3 N + (CH 2 ) 10 COOH; AUA) as an exfoliation agent for the fabrication of elementary oxide nanosheet.…”

Section: Introductionmentioning

confidence: 99%

The steric effect of exfoliation agent for fabrication of layer niobium oxide nanosheet

Wattanapaphawong,

Reubroycharoen,

Samart

et al. 2023

Int J Applied Ceramic Tech

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In this research, the steric effect of an exfoliation agent between n‐ethylamine and triethylamine for the fabrication of Ca2Nb3O10− nanosheet was investigated. The experimental results revealed that the different structures of the exfoliation agent have affected to fabrication of Ca2Nb3O10− nanosheet. The use of n‐ethylamine as an exfoliation agent gave a maximum exfoliation efficiency of 10 wt.% while the maximum exfoliation efficiency of triethylamine was 90 wt.%. The result showed that the difference in exfoliation efficiency was caused by the steric effect of exfoliation agents. The image of transmission electron microscopy exhibited Ca2Nb3O10− nanosheets which were formed by exfoliation of HCa2Nb3O10. Furthermore, the reaction time for liquid exfoliation was studied in this work. The reaction time at 4 h gave a maximum of exfoliation efficiency. The Ca2Nb3O10− suspension was tested capability to remove hazardous ions. After the experiment, we found the white precipitate which was the formation of CsCa2Nb3O10. The result showed that the Ca2Nb3O10− nanosheet was efficient for the removal of Cs+ ions in the wastewater.

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Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator

Cited by 18 publications

References 23 publications

All-Solution-Processed High-Performance MoS₂ Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

All-Solution-Processed High-Performance MoS₂ Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Metal Oxide Nanosheets as 2D Building Blocks for the Design of Novel Materials

The steric effect of exfoliation agent for fabrication of layer niobium oxide nanosheet

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Low-voltage operating solution-processed CdS thin-film transistor with Ca2Nb3O10 nanosheets deposited using Langmuir–Blodgett method for a gate insulator

Cited by 18 publications

References 23 publications

All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

Metal Oxide Nanosheets as 2D Building Blocks for the Design of Novel Materials

The steric effect of exfoliation agent for fabrication of layer niobium oxide nanosheet

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All-Solution-Processed High-Performance MoS₂ Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

All-Solution-Processed High-Performance MoS₂ Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric