Low-voltage-operation of flexible organic C8-BTBT thin-film transistors with a reactively sputtered AlOx gate dielectric

Abstract

High-k dielectrics are frequently used for organic thin-film transistors (OTFTs), which facilitate the reduction of the device's operating voltage and enhance the total electrical performance. Along these lines, in this work, the fabrication of high-k AlO x dielectrics with high capacitance and low leakage current is proposed. On top of that, low-voltage flexible OTFTs with a solution-processed 2,7-dioctyl benzothieno[3,2-b] benzothiophene channel layer were demonstrated. The AlO x dielectric film was deposited by employing the reactive magnetron sputtering technique from a metal Al target by using a gas mixture of Ar and O2 at room temperature. At the same time, the surface morphology of the semiconductor film was optimized by controlling the solid solubility of polystyrene and polymethyl methacrylate in the semiconductor solution, which is important for improving the device performance. In this way, the prepared flexible OTFTs showed a low operating voltage of 3 V, a high switch ratio of 4.2 × 107, a high mobility is 2.39 cm2/V s, and a steep subthreshold swing close to the theoretical limit of 68 mV/decade. It is, thus, expected that this method will be applicable to the development of high-performance OTFTs.

Lattice strain-induced high-performance low-operating-voltage organic field-effect transistors by solution-sheared organic single crystal

“…4(c), with average and maximum mobilities of 8.47 cm 2 V À1 s À1 and 8.97 cm 2 V À1 s À1 , respectively. The standard deviation is remarkably low at only 0.254 cm 2 V À1 s À1 , corresponding to the mobility coefficient of variation (CV) 4,19,[24][25][26][27][28] equals to 2.99%. This CV performs on par with the highest reported value so far for single crystal OFETs, 11 demonstrating excellent uniformity.…”

“…(e) Mobility of OFETs at different shear speeds. (f) Low-voltage OFET statistics using C 8 -BTBT molecules and a high-k dielectric layer 4,19,[24][25][26][27][28].…”

Bionic Tactile‐Gustatory Receptor for Object Identification Based on All‐Polymer Electrochemical Transistor

“…These results indicate excellent durability of the flexible AECTs fabricated via the proposed strategy, denoting their huge potentials in high-performance flexible electronics. [30][31][32] The effects of humidity and temperature on the electrical performances of the OECTs are shown in Figure S11 (Supporting Information). The device was stable under humidity values ≈50% to 71%, which is comfortable for human body (humidity ranges from 40% to 60%).…”

A new dithieno[3,2-b:2′,3′-d]thiophene derivative for high performance single crystal organic field-effect transistors and UV-sensitive phototransistors

“…In recent decades, organic semiconductors (OSCs) have attracted intensive attention due to their advantages such as diverse functional modication, 1-3 light weight, intrinsic exibility, [4][5][6][7][8] easy large-area solution processing, [9][10][11][12] and better compatibility with a exible substrate or biosystem, 13,14 and have found applications in many elds, including organic eld-effect transistors (OFETs), [15][16][17][18][19][20] organic light-emitting transistors (OLETs), [21][22][23][24][25][26][27] organic light-emitting diodes (OLEDs), [28][29][30] organic photovoltaics (OPVs), [31][32][33] organic photo detectors (OPDs) [34][35][36][37][38] and so on.…”