Low-Voltage Organic Single-Crystal Field-Effect Transistor with Steep Subthreshold Slope

Abstract

Anodization is a promising technique to form high- k dielectrics for low-power organic field-effect transistor (OFET) applications. However, the surface quality of the dielectric, which is mainly inherited from the metal electrode, can be improved further than other fabrication techniques, such as sol-gel. In this study, we applied the template stripping method to fabricate a low-power single-crystalline OFET based on the anodized AlO dielectric. We found that the template stripping method largely improves the surface roughness of the deposited Al and allows for the formation of a high-quality AlO high- k dielectric by anodization. The ultraflat AlO /SAM dielectric combined with a single-crystal 2,6-diphenylanthracene (DPA) semiconductor produced a nearly defect-free interface with a steep subthreshold swing (SS) of 66 mV/decade. The current device is a promising candidate for future ultralow-power applications. Other than metal deposition, template stripping could provide a general approach to improve thin-film quality for many other types of materials and processes.

Organic Field‐Effect Transistor for Energy‐Related Applications: Low‐Power‐Consumption Devices, Near‐Infrared Phototransistors, and Organic Thermoelectric Devices

“…[34] This atomic flat surface together with the ink-jet-printed polymer semiconductor turned on the OFET with a steep SS of 65 mV dec −1 . [115] Copyright 2018, American Chemical Society. The thickness of the rubrene crystal is 2.3 µm.…”

“…Klauk and co-workers developed the oxygen plasmagrown ultrathin AlO x and SAM hybrid dielectrics. [115] Unlike conventional thermally evaporated Al thin film, for which the surface roughness is usually larger than 1 nm, a template striping method is applied to reduce the surface roughness of the as-deposited Al to ≈0.6 nm. A repeatable SS ranging from 68-100 mV dec −1 was realized based on various thermally evaporated semiconductors.…”

“…Single-crystalline organic semiconductors always provide the best device performance due to the absence of grain boundary, dangling bonds, or other structural defects. [13,35,36,[113][114][115] Willa et al compared the electrical properties of OFETs as a function of the semiconductor degree of the crystalline order. [35] The OFET made by a single-crystal N,N′-1H,1H-perfluorobutyl dicyanoperylene carboxydiimide (PDIF-CN 2 ) exhibited a 2-3 orders of magnitude lower trap density of states (DOS) than any other form of PDIF-CN 2 , including thermally evaporated and spin-coated thin film.…”

A Flexible Self‐Powered Sensing Element with Integrated Organic Thermoelectric Generator

“…[16][17][18] A straightforward way to fabricate OSSEs relies on the construction of individual multifunctional devices, such as piezoelectric [19][20][21] and thermoelectric [21][22][23] devices, with combined energy harvesting and sensing functionalities in a single element. [24][25][26][27][28] The energy gap between power generation and power consumption elements has prevented OSSEs based on integrated OTEs and OFETs from yet being demonstrated.Herein, we report an OSSE with a paper-substratebased OTE generator and an OFET-based chemical sensor (Figure 1a), achieved by incorporating poly(3,4ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) legs to harvest energy and n-type OFETs with an ultralow operation voltage to detect chemical stimuli. [21] Despite the simultaneous realization of power generation and prominent sensing properties via the thermoelectric and piezoresistive effect, the external stimuli sensed are limited to physical stimuli such as pressure and temperature.…”

Construction of Large‐Area Ultrathin Conductive Metal–Organic Framework Films through Vapor‐Induced Conversion

“…As shown in Figure a, the polymethyl methacrylate (PMMA) was introduced as buffer layer between MOGA film and adhesives. Weak adhesion of MOGA films and substrate is the premise of stripping . Hence, octadecyltrichlorosilane (OTS)‐decorated silicon wafer was applied as the new substrate.…”