2007
DOI: 10.1016/j.orgel.2006.12.001
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Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator

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Cited by 37 publications
(12 citation statements)
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“…This set of experiments seemingly shows that the pore membrane can support water on one side without wetting the other side, probably owing to the relatively hydrophobic surface property of AlN. 47 In order to gain a better understanding of the immersion processes, we simulated the extinction spectra for the corresponding LRO structures in different immersion configurations: (i) entirely in air, (ii) only top side in water with the pore unfilled, (iii) top side and inside of the pore in water, and (iv) entirely in water. The simulated spectra are shown in Figure 3e, and the resonance shift with respect to the simulated position in air is plotted as rhombuses in Figure 3d, superimposed on the experimental curve.…”
Section: ■ Results and Dicussionmentioning
confidence: 85%
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“…This set of experiments seemingly shows that the pore membrane can support water on one side without wetting the other side, probably owing to the relatively hydrophobic surface property of AlN. 47 In order to gain a better understanding of the immersion processes, we simulated the extinction spectra for the corresponding LRO structures in different immersion configurations: (i) entirely in air, (ii) only top side in water with the pore unfilled, (iii) top side and inside of the pore in water, and (iv) entirely in water. The simulated spectra are shown in Figure 3e, and the resonance shift with respect to the simulated position in air is plotted as rhombuses in Figure 3d, superimposed on the experimental curve.…”
Section: ■ Results and Dicussionmentioning
confidence: 85%
“…The water injections on one side and both sides were done after 11 and 15 min, respectively, and caused abrupt increases of the peak position. This set of experiments seemingly shows that the pore membrane can support water on one side without wetting the other side, probably owing to the relatively hydrophobic surface property of AlN . In order to gain a better understanding of the immersion processes, we simulated the extinction spectra for the corresponding LRO structures in different immersion configurations: (i) entirely in air, (ii) only top side in water with the pore unfilled, (iii) top side and inside of the pore in water, and (iv) entirely in water.…”
Section: Results and Dicussionmentioning
confidence: 99%
“…This is associated with the laser induced texturing of the surface and the presence of AlN compound at the surface, which is formed during the laser treatment process. In this case, the surface free energy of AlN is 38.3 mJ/m 2 [46] when compared to 93.9 mJ/m 2 for Al [47]. The low surface energy of AlN (γ sl ) enhances the contact angle for the laser treated surface.…”
Section: Surface Hydrophobicitymentioning
confidence: 99%
“…Combined with aluminum nitride (AlN) as the piezoelectric material, the fabrication of SAW devices is compatible with the Complementary Metal Oxide Semiconductor (CMOS) process 14 . Moreover, the chemical stability 15 and hydrophobicity 16 of AlN are beneficial to the stability of the SAW device during humidity sensing.…”
Section: Introductionmentioning
confidence: 99%