Low-Voltage Organic Transistors Based on Tetraceno[2,3-<i>b</i>]thiophene: Contact Resistance and Air Stability

Kraft, Ulrike; Anthony, John E.; Ripaud, Emilie; Loth, Marsha A.; Weber, Edwin; Klauk, Hagen

doi:10.1021/cm5043183

Cited by 60 publications

(47 citation statements)

References 56 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the bending experiment, the banknote was rolled around a cylindrical bar with a radius of about 2.5 mm, which induces a tensile strain of about 3% in the TFTs. [38][39][40][41] Using the transmission line method (TLM), [25,27,[39][40][41][42][43] we have determined a width-normalized contact resistance of 1.4 kΩ cm and an intrinsic channel mobility of 0.8 cm 2 (Vs) −1 at an overdrive voltage (V GS -V th ) of −1.3 V for the DNTT TFTs (see also Table S2 in the Supporting Information). There appears to be no systematic effect of the bending on the threshold voltage and the gate current.…”

Section: Static Characteristics Of P-channel Dntt Tfts On Banknotesmentioning

confidence: 99%

Low‐Voltage, High‐Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper

Kraft

Zaki

Letzkus

et al. 2018

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

Paper substrates for flexible, mobile, and disposable electronic applications draw academic and commercial attention due to their many advantages, such as cost efficiency, low weight, mechanical flexibility, and environmental compatibility. For portable electronic applications, it is important that the electronic devices and circuits can be operated with voltages of a few volts, due to the limitations of mobile power supplies, such as solar cells or energy harvesting devices. Here, low‐voltage organic p‐channel and n‐channel transistors as well as unipolar and complementary ring oscillators are fabricated directly on the surface of a banknote. It is demonstrated that low‐power organic integrated circuits on paper substrates can be operated with supply voltages of less than 3 V and with frequencies of several hundred kilohertz. These results emphasize the prospects of organic transistors for smart paper applications.

show abstract

Section: Static Characteristics Of P-channel Dntt Tfts On Banknotesmentioning

confidence: 99%

Low‐Voltage, High‐Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper

Kraft

Zaki

Letzkus

et al. 2018

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…37 The contact resistance decreases from 225 X cm at a gate-source voltage of À10 V to 131 X cm at a gate-source voltage of À20 V. Improvements in the contact performance are required in order to take advantage of emerging high-mobility organic semiconductors. 38,39 Analysis of the transistor's small-signal equivalent circuit shows that the source resistance R S acts as a feedback that reduces the effective transconductance g m by a factor (1 þ R S g m ). Thus, in order for the device performance not to be limited by the source resistance, it is important that R S g m ( 1.…”

Section: A Intrinsic Source Contact Characteristicsmentioning

confidence: 99%

High voltage surface potential measurements in ambient conditions: Application to organic thin-film transistor injection and transport characterization

Tournadre

Reisdorffer

Rödel

et al. 2016

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

A scanning surface potential measurement technique suited for thin-film devices operating under high voltages is reported. A commercial atomic force microscope has been customized to enable a feedback-controlled and secure surface potential measurement based on phase-shift detection under ambient conditions. Measurements of the local potential profile along the channel of bottom-gate organic thin-film transistors (TFTs) are shown to be useful to disentangle the contributions from the channel and contacts to the device performance. Intrinsic contact current-voltage characteristics have been measured on bottom-gate, top-contact (staggered) TFTs based on the small-molecule semiconductor dinaphtho[2,3-b:2 0 ,3-f]thieno[3,2-b]thiophene (DNTT) and on bottom-gate, bottomcontact (coplanar) TFTs based on the semiconducting polymer polytriarylamine (PTAA). Injection has been found to be linear in the staggered DNTT TFTs and nonlinear in the coplanar PTAA TFTs. In both types of TFT, the injection efficiency has been found to improve with increasing gate bias in the accumulation regime. Contact resistances as low as 130 X cm have been measured in the DNTT TFTs. A method that eliminates the influence of bias-stress-induced threshold-voltage shifts when measuring the local charge-carrier mobility in the channel is also introduced, and intrinsic channel mobilities of 1.5 cm 2 V À1 s À1 and 1.1 Â 10 À3 cm 2 V À1 s À1 have been determined for DNTT and PTAA. In both semiconductors, the mobility has been found to be constant with respect to the gate bias. Despite its simplicity, the Kelvin probe force microscopy method reported here provides robust and accurate surface potential measurements on thin-film devices under operation and thus paves the way towards more extensive studies of particular interest in emerging fields of solid-state electronics. V

show abstract

“…The substrate is a Cu(111) surface, which was cleaned by repeated cycles of Ar + ion bombardment and subsequent annealing at 800 K. Pentacene was purchased from Sigma-Aldrich. TCT molecules were synthesized following the methodology described in reference [29]. The spectroscopic inves-tigations of the identity and purity of tetracenothiophene and the precursors is presented in the Supporting Information 1.…”

Section: Methodsmentioning

confidence: 99%

Controlling Single Molecule Conductance by a Locally Induced Chemical Reaction on Individual Thiophene Units

et al. 2020

Self Cite

View full text Add to dashboard Cite

Among the prerequisites for the progress of single‐molecule‐based electronic devices are a better understanding of the electronic properties at the individual molecular level and the development of methods to tune the charge transport through molecular junctions. Scanning tunneling microscopy (STM) is an ideal tool not only for the characterization, but also for the manipulation of single atoms and molecules on surfaces. The conductance through a single molecule can be measured by contacting the molecule with atomic precision and forming a molecular bridge between the metallic STM tip electrode and the metallic surface electrode. The parameters affecting the conductance are mainly related to their electronic structure and to the coupling to the metallic electrodes. Here, the experimental and theoretical analyses are focused on single tetracenothiophene molecules and demonstrate that an in situ‐induced direct desulfurization reaction of the thiophene moiety strongly improves the molecular anchoring by forming covalent bonds between molecular carbon and copper surface atoms. This bond formation leads to an increase of the conductance by about 50 % compared to the initial state.

show abstract

Low-Voltage Organic Transistors Based on Tetraceno[2,3-b]thiophene: Contact Resistance and Air Stability

Cited by 60 publications

References 56 publications

Low‐Voltage, High‐Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper

Low‐Voltage, High‐Frequency Organic Transistors and Unipolar and Complementary Ring Oscillators on Paper

High voltage surface potential measurements in ambient conditions: Application to organic thin-film transistor injection and transport characterization

Controlling Single Molecule Conductance by a Locally Induced Chemical Reaction on Individual Thiophene Units

Contact Info

Product

Resources

About