Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Abstract

Low-voltage organic transistors based on solution processed semiconductors and selfassembled monolayer gate dielectrics Woebkenberg, Paul H.; Ball, James; Kooistra, Floris B.; Hummelen, Jan C.; de Leeuw, Dago M.; Bradley, Donal D. C.; Anthopoulos, Thomas D. Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Downloaded from the University of Groningen/UMCG research database (Pure): http://www.rug.nl/research/portal. For technical reasons the number of authors shown on this cover page is limited to 10 maximum. Reduction in the operating voltage of organic transistors is of high importance for successful implementation in low-power electronic applications. Here we report on low-voltage n-channel transistors fabricated employing a combination of soluble organic semiconductors and a self-assembled gate dielectric. The high geometric capacitance of the nanodielectric allows transistor operation below 2 V. Solution processing is enabled by analysis of the surface energy compatibility of the dielectric and semiconductor solutions. Electron mobilities in the range of 0.01-0.04 cm 2 / V s and threshold voltages ഛ0.35 V are demonstrated. The present work paves the way toward solution processable low-voltage/power, organic complementary circuits.

Wetting, Solubility and Chemical Characteristics of Plasma-Polymerized 1-Isopropyl-4-Methyl-1,4-Cyclohexadiene Thin Films

“…By placing a boundary on the curve at a CA of 0°, complete wetting behavior can be determined. Liquids with surface energy components that lie above the line of θ = 40° will not wet the surfaces of pp-GT films sufficiently to enable suitable film formation from solution processing [71]. The points for water are lying on or between the 60° and 80° contour of the pp-GT wetting envelope, which means that it will not wet a pp-GT film surface, but rather, show a CA between 60° and 80°.…”

“…It shows the extent to which the liquid will adhere to the surface relative to itself and, hence, indicates the ability of a liquid drop to stick to the solid surface during solution processing [71].…”

Dry growth of n-octylphosphonic acid monolayer for low-voltage organic thin-film transistors

“…To date the self-assembled monolayers based on alkyl phosphonic acids [20][21][22][23][24][25][26][27] have been obtained by solution process only. In this paper we present that such monolayers can be prepared by dry method as well.…”

“…To obtain low leakage current with aluminium oxide, the oxide surface has been modified with polymer layers [16][17][18][19] or self-assembled monolayers (SAMs) [20][21][22][23][24][25][26]. Along with low leakage current density, the polymer surface yielded very low surface roughness of  0.3 nm and transistor operating voltages of about 6 to 8 V. Further reduction in OTFT operating voltages down to 3 V was achieved with SAMs.…”

Carbon‐Based Field‐Effect Transistors for Nanoelectronics

“…[58] Finally, low-temperature, high-capacitance gate dielectrics for organic transistors can be realized by combining a thin layer of an oxygen-plasma-grown metal oxide and a self-assembled monolayer (SAM) of an aliphatic phosphonic acid. [59][60][61][62] In this approach, the surface of the metal gate electrodes is oxidized at room temperature by an oxygen plasma. In the case of aluminum gate electrodes, this forms an AlO x layer with a thickness of 3-4 nm, depending on the plasma power.…”