Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{SiO}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Dou, Wei; Jiang, Jie; Sun, Jia; Zhou, Bin; Wan, Qing

doi:10.1109/led.2012.2192712

Cited by 12 publications

(12 citation statements)

References 16 publications

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“…It is observed that the capacitance decreased when the frequency is increased from 1.0 Hz to 1.0 MHz. The high capacitance (2 µF/cm 2 ) obtained at a low frequency is attributed to the formation of an EDL at the AZO electrode/SA membrane interface [6]- [10]. We also obtained an acceptably low leakage current for the SA membrane with the in-plane AZO-SA-AZO structure of below 60 pA at an applied voltage of 1 V (See Fig.…”

Section: Experiments Detailsmentioning

confidence: 54%

Low-Voltage Transient/Biodegradable Transistors Based on Free-Standing Sodium Alginate Membranes

Guo

Liu

Yang

et al. 2015

IEEE Electron Device Lett.

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In this letter, we report a novel transient/ biodegradable transistor. The Al:ZnO (AZO) source, drain, and gate electrodes are directly self-assembled on the free-standing sodium alginate (SA) membrane by magnetron sputtering, and the SA membrane is used simultaneously as the substrates and dielectrics for the transistor. Due to the strong lateral electrostatic coupling effects of SA membrane, the transistor can operate at a low voltage of 1 V. Dissolution tests of the transistor in deionized water suggest its completely physical transience within 1 h.Index Terms-Low voltage transistors, free-standing sodium alginate membranes, transient/biodegradable transistors.

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Section: Experiments Detailsmentioning

confidence: 54%

Low-Voltage Transient/Biodegradable Transistors Based on Free-Standing Sodium Alginate Membranes

Guo

Liu

Yang

et al. 2015

IEEE Electron Device Lett.

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“…Such materials can be obtained in solid-state forms, but they usually exhibit poor chemical stability particularly at elevated temperatures 16 . Oxide-based solid-state electrolytes, such as porous SiO 2 and Al 2 O 3 , have also emerged as an alternative to the conventional electrolytes recently 17 – 19 . Their porous structure offers a large effective surface area, capable of accommodating a large number of mobile protons 17 – 19 .…”

Section: Introductionmentioning

confidence: 99%

A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors

Zhang

Cai

et al. 2017

Sci Rep

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Low operating voltages have been long desired for thin-film transistors (TFTs). However, it is still challenging to realise 1-V operation by using conventional dielectrics due to their low gate capacitances and low breakdown voltages. Recently, electric double layers (EDLs) have been regarded as a promising candidate for low-power electronics due to their high capacitance. In this work, we present the first sputtered SiO2 solid-state electrolyte. In order to demonstrate EDL behaviour, a sputtered 200 nm-thick SiO2 electrolyte was incorporated into InGaZnO TFTs as the gate dielectric. The devices exhibited an operating voltage of 1 V, a threshold voltage of 0.06 V, a subthreshold swing of 83 mV dec−1 and an on/off ratio higher than 105. The specific capacitance was 0.45 µF cm−2 at 20 Hz, which is around 26 times higher than the value obtained from thermally oxidised SiO2 films with the same thickness. Analysis of the microstructure and mass density of the sputtered SiO2 films under different deposition conditions indicates that such high capacitance might be attributed to mobile protons donated by atmospheric water. The InGaZnO TFTs with the optimised SiO2 electrolyte also showed good air stability. This work provides a new pathway to the realisation of high-yield low-power electronics.

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“…In our previous work, one-step self-assembly deposition method was developed for low-voltage oxide-based EDL transistors fabrication, and synaptic behaviors were mimicked in the IZO-based EDL transistors gated by nanogranular Manuscript SiO 2 electrolyte films [9], [10]. In addition, low-cost solutionprocessed chitosan proton conducting electrolyte film was also used as the gate dielectric for low-voltage oxide-based EDL transistor fabrication [11], [12]. In this letter, short-term potentiation and long-term potentiation is mimicked in such IZO-based EDL transistors gated by chitosan films.…”

Section: Introductionmentioning

confidence: 99%

Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity

Zhou

Liu

Shi

et al. 2014

IEEE Electron Device Lett.

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Indium-zinc-oxide (IZO)-based electric double layer (EDL) transistors gated by solution-processed chitosan electrolyte films are fabricated on glass substrates and used for mimicking synaptic plasticity. The conductance of the selfassembled IZO channel tuned by the proton electrostatic modulation and electrochemical doping is regarded as the synaptic weight. Synaptic behaviors like paired-pulse facilitation and longterm potentiation are mimicked in the chitosan-gated IZO-based EDL transistor. Our results suggest that gate pulse amplitude and number have great influence on the synaptic plasticity transition.

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Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{SiO}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Cited by 12 publications

References 16 publications

Low-Voltage Transient/Biodegradable Transistors Based on Free-Standing Sodium Alginate Membranes

Low-Voltage Transient/Biodegradable Transistors Based on Free-Standing Sodium Alginate Membranes

A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors

Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity

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