Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution

Chu, Ying Hao; Zhan, Qian; Yang, Chan−Ho; Cruz, M. P.; Martin, Lane W.; Zhao, Tong; Yu, Pu; Ramesh, R.; Joseph, Pharrah; Lin, I‐Nan; Tian, Wei; Schlom, Darrell G.

doi:10.1063/1.2897304

Cited by 107 publications

(77 citation statements)

References 13 publications

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“…33 It is likely that La 3 þ ions substitute Bi 3 þ ions (A-site doping) because they have similar effective ionic radii (1.36 Å ). 34 Although the La substitutions would modify structural and ferroelectric properties such as domain size, coercive voltage and fatigue behavior, 35,36 in many cases only the La 5% substitutions do not cause dramatic changes in physical properties. However, due to the mechanically susceptible nature of morphotropic phase boundaries, such a small doping has a great impact on the formation of T-R 0 PBs.…”

Section: Resultsmentioning

confidence: 99%

Electric control of straight stripe conductive mixed-phase nanostructures in La-doped BiFeO3

et al. 2014

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This study examines the atomic force microscope (AFM) tip-based electrical formation of tens of microns long stripe (and B100 nm wide) inorganic one-dimensional nanostructures based on the morphotropic phase boundary of La-doped BiFeO 3 epitaxial thin films. The substitution of Lanthanum into bismuth ferrite not only produces the formation of straight stripe mixedphase patterns but also improves the spatial continuity drastically by two orders of magnitude. We create, switch and erase stripe nanostructures in a reversible and deterministic way. We demonstrate that electrically formed areas with a nearly single variant alignment can be overwritten with different alignments repeatedly, which reflects the reversible and nonvolatile nature of the switching process. In addition, we explore the functionality of the created nanostructures by clarifying ferroelectric polarizations and observing the improvement of the electronic conduction at the phase boundary. Our findings provide new pathways to one-dimensional rewritable nanostructures and inspire researchers to conceive various multifunctional devices by combining the superb electromechanical property with their unique interfacial electronic conduction properties at nanoscale phase boundaries.

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Section: Resultsmentioning

confidence: 99%

Electric control of straight stripe conductive mixed-phase nanostructures in La-doped BiFeO3

et al. 2014

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“…[1][2][3] Theoretically predicted improvement of the electromechanical properties of the BiFeO 3 -based solid solutions near the morphotropic phase boundary (MPB) essentially increased a number of studies on these systems. 4,5 Improved ferroelectric properties of the compounds near the MPB were experimentally attested in a number of studies on Bi 1 x RE x FeO 3 ceramics and thin films. [6][7][8][9] The highest electromechanical response among the compounds of Bi 1 x RE x FeO 3 systems was observed so far for Ladoped solid solutions of the compositions near the rhombohedral-orthorhombic phase boundary.…”

Section: Introductionmentioning

confidence: 99%

Electromechanical and magnetic properties of BiFeO3-LaFeO3-CaTiO3 ceramics near the rhombohedral-orthorhombic phase boundary

Karpinsky

Troyanchuk

Sikolenko

et al. 2013

Journal of Applied Physics

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BiFeO 3 -LaFeO 3 -CaTiO 3 ceramics have been studied by X-ray diffraction, magnetization measurements, and piezoresponse force microscopy (PFM). The compositional ranges of the polar, antipolar, and non-polar phases have been estimated. PFM measurements testify gradual decrease of piezoelectric response in Bi 0.85 x La 0.15 Ca x Fe 1 x Ti x O 3 system with Ca/Ti content increase, except a narrow concentration region near polar-antipolar phase boundary where piezoelectric signal shows maximum value. It is found that increase of dopant concentration leads to apparent decrease of the off-center Bi-O displacement and, consequently, causes a reduction of piezoelectric response. It is concluded that notable remanent magnetization in polar and non-polar structural phases is a result of the Dzyaloshinsky-Moria interaction. V C 2013 AIP Publishing LLC [http://dx

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“…These issues can be reduced via the chemical substitution of rare earth elements onto A-sites in the BFO lattice. [3][4][5][6] Recent comprehensive investigations of Sm-doped BFO ͑BSFO͒ thin films over various compositions discovered a critical composition of 14% Sm-concentration at room temperature. 6 At this critical doping, the film has features of a morphotropic phase boundary ͑MPB͒ solid solution, consisting of a cell-doubled orthorhombic Pnma phase beyond the MPB and a PbZrO 3 ͑PZO͒-like structural phase in local regions below the MPB.…”

mentioning

confidence: 99%

Phase coexistence near a morphotropic phase boundary in Sm-doped BiFeO3 films

Emery¹,

Cheng²,

Kan³

et al. 2010

Applied Physics Letters

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We have investigated heteroepitaxial films of Sm-doped BiFeO 3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron X-ray diffraction, carried out in a temperature range of 25°C to 700°C, reveals substantial phase coexistence as one changes temperature to crossover from a low-temperature PbZrO 3 -like phase to a high-temperature orthorhombic phase. We also examine changes due to strain for films exhibiting anisotropic misfit between film and substrate. Additionally, thicker films exhibit a substantial volume collapse associated with the structural transition that is suppressed in thinner films.

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Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution

Cited by 107 publications

References 13 publications

Electric control of straight stripe conductive mixed-phase nanostructures in La-doped BiFeO3

Electric control of straight stripe conductive mixed-phase nanostructures in La-doped BiFeO3

Electromechanical and magnetic properties of BiFeO3-LaFeO3-CaTiO3 ceramics near the rhombohedral-orthorhombic phase boundary

Phase coexistence near a morphotropic phase boundary in Sm-doped BiFeO3 films

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