Low voltage sub-nanosecond pulsed current driver IC for high-resolution LIDAR applications

Abramov, Eli; Evzelman, Michael; Kirshenboim, Or; Urkin, Tom; Peretz, Mor Mordechai

doi:10.1109/apec.2018.8341090

Cited by 11 publications

(4 citation statements)

References 28 publications

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“…Recent reports [18], [19] proposed designs of precision current sources; however, these solutions are unsuitable for the high current levels required for power LEDs. Other recent articles focus on high-speed LED drivers working down to the nanosecond scale [20], [21], [22], [23], but their application remains limited to pulsed test of optoelectronic devices, without focusing on the long-term analysis of the heating transients.…”

Section: Current Source Circuit a Circuit Operationmentioning

confidence: 99%

Fast Characterization of Power LEDs: Circuit Design and Experimental Results

Roccato,

Piva,

Buffolo

et al. 2024

IEEE Trans. Electron Devices

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A precise measurement of optical power, forward voltage, and junction temperature of light-emitting diodes (LEDs) is the key for characterization and health monitoring of these devices. In many cases, LED characterization is carried out with relatively long (10 ms and longer) pulses, that is, in conditions in which self-heating can significantly impact measurement results. To overcome this limitation, this article proposes a fast and versatile measurement approach based on a specifically designed current source, with a maximum current of about 1 A, high stability (variations under 0.1%) and settling time <20 µs, and demonstrates its applicability to pulsed and transient characterization of power LEDs. The proposed system has the inherent advantages of 1) permitting a fast pulsed characterization of the devices, which-as we demonstrate-is much more accurate than quasipulsed or dc analysis; 2) allowing isothermal characterization of LEDs without requiring long settling times, with beneficial impact on the throughput of LED characterization; 3) allowing characterization of the voltage heating transient (during constant current operation), which is the key for junction temperature and thermal resistance extraction, as well as for the development of compact models; 4) monitoring the optical power during the self-heating transient; and 5) the spectrum of the device providing additional information, such as the peak-shift or the phosphor behavior. The efficacy of the proposed approach has been demonstrated by Manuscript

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Section: Current Source Circuit a Circuit Operationmentioning

confidence: 99%

Fast Characterization of Power LEDs: Circuit Design and Experimental Results

Roccato,

Piva,

Buffolo

et al. 2024

IEEE Trans. Electron Devices

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“…A similar solution presented in [90] is very attractive and energy-efficient: a constant current is produced by a DC/DC converter, that can achieve 2.5 MHz PRF at 5 A, but requires three switches and complex driving signals, which should be implemented in dedicated IC or FPGA.…”

Section: Driver Topologies Analysismentioning

confidence: 99%

Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

Svilainis

Chaziachmetovas

Eidukynas

et al. 2021

IEEE Trans. Instrum. Meas.

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Laser ultrasound offers several benefits in comparison to immersion or air coupled ultrasound: it directly generates stress on the sample surface; it has a wide bandwidth and a small acoustic source can be produced. Conventionally, high power pulsed lasers are required therefore equipment is bulky and expensive. Here we propose to use mid-power laser diodes, which are small and low cost. To solve the low signal amplitude problem with lower power lasers, the use of spread spectrum signal, arbitrary position and width binary pulse sets is proposed. To date, a laser driver for this task has not been available. This paper describes the development of such a compact driver, where the essential electronics occupy an area of 10x20 mm. The whole system with a fixture for kinematic mount is comparable in size to a conventional piezoelectric ultrasonic transducer. The driver can supply pulse sets of up to 40 A. Individual pulse duration can vary between 20 ns to 1000 ns (0.5-25 MHz ultrasound range) and the total pulse train duration is limited by the laser type used. Experiments show that up to 10 s long pulse sets can be used at 10 A current, without laser degradation. Current waveforms, beam profile and optical response signals were measured for three rectified topologies. It was concluded, that the GaN based constant current switch topology has the best performance, but a power MOSFET in a source current feedback topology can also be used to generate pulses down to 20 ns. Photoacoustic response signals from chirp and phase shift keying modulation have been demonstrated.

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“…A significant portion of the parasitic inductances of the power loop is therefore to be found on the drain-source-path of the package itself. There have been several attempts to overcome these limitations through circuit measures, 15 however, they are mostly limited to low current loads. Therefore, the most straightforward way to improve the overall switching performance is to minimize the package inductances of the drain source path directly, 16 or indirectly through different package layouts.…”

Section: Related Workmentioning

confidence: 99%

“…13,14 However, the pulse length remains the main criteria for resolution and eye safety. As these pulse lengths need to be in the range of nanoseconds, the rise-and fall times of these pulses must be in the hundreds of picoseconds region, 15 which infers frequencies into the GHz range. Due to this circumstance, and the fact that the physical dimensions of the power transistor packages under investigation in this work are in the order of λ/10 above 1 GHz, for the first time a frequency limit of 2 GHz was used for simulating the packages.…”

Section: Introductionmentioning

confidence: 99%

Comparison of the parasitic impedances from the drain‐source path of power transistor packages at up to 2 GHz

Moldaschl

Woetzel

Latella³

et al. 2021

Engineering Reports

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In this article, we compare several concepts for gallium-nitride (GaN) power high electron mobility transistor (HEMT) packages in terms of their drain-to-source parasitic inductance and resistance values. Unlike in previous studies, however, due to several fast transient use cases the investigated frequencies are extended to 2 GHz. Since the device's dimensions are already a significant fraction of the corresponding wavelength at 2 GHz, full wave simulation tools have been employed to more accurately assess the problem. The results reveal how the considered package concepts affect the overall parasitic device impedances and show a clear improvement of the parasitic impedance over each generation of package implementation. Furthermore, full wave analysis results are compared to method of moments results to emphasize the necessity of full wave simulations at these frequencies.

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Low voltage sub-nanosecond pulsed current driver IC for high-resolution LIDAR applications

Cited by 11 publications

References 28 publications

Fast Characterization of Power LEDs: Circuit Design and Experimental Results

Fast Characterization of Power LEDs: Circuit Design and Experimental Results

Compact Laser Driver for Ultrasonic Arbitrary Position and Width Pulse Sequences Generation

Comparison of the parasitic impedances from the drain‐source path of power transistor packages at up to 2 GHz

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