Low‐Voltage UV‐Electroluminescence from ZnO‐Nanowire Array/p‐GaN Light‐Emitting Diodes

Lupan, Oleg; Pauporté, Thierry; Viana, Bruno

doi:10.1002/adma.201000611

Cited by 294 publications

(224 citation statements)

References 34 publications

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“…Concerning the origin of the violet emission under forward bias, it was attributed to different origins in the literature, such as radiative recombination in ZnO, 24 different contributions of band edge emissions of GaN and ZnO (Refs. 2 and 3) and interfacial recombinations, 2 recombination on defects in p-GaN, 17 shift due to the energy band offsets in n-GaN/pZnO heterojunction, 23 as well as the presence of interfacial layer resulting in charge accumulation and bandgap renormalization.…”

Section: The Origin Of the Emission Peaksmentioning

confidence: 99%

“…2,22,24 Thus, in majority of reports, there are no data available on absolute brightness or quantum efficiency of the devices. In those few cases, where efficiency was given, it was typically low (0.00005% (Ref.…”

Section: Introductionmentioning

confidence: 99%

“…Consequently, yellow-orange defect emission is commonly attributed to the defect states in ZnO, 4,28 while UV-Violet emission which typically falls between the PL peaks of ZnO and GaN has been attributed to both ZnO (Ref. 24) and GaN (Ref. 17), with different reasons proposed to explain the peak shift.…”

Section: Introductionmentioning

confidence: 99%

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ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Chen

Fang

et al. 2011

Journal of Applied Physics

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Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence Appl. Phys. Lett. 100, 153506 (2012) Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring J. Appl. Phys. 111, 074512 (2012) Effects of energetic disorder on the low-frequency differential capacitance of organic light emitting diodes J. Appl. Phys. 111, 074506 (2012) Probing the electrode-polymer interface in conjugated polymer devices with surface-enhanced Raman scattering Appl. Phys. Lett. 100, 141907 (2012) Low-cost caesium phosphate as n-dopant for organic light-emitting diodes J. Appl. Phys. 111, 074502 (2012) Additional information on J. Appl. Phys. ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m 2 and tunable emission (from orange at 2.1 V to blue at 2.7 V, with nearly white emission with Commission internationale de l'éclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5 V) was obtained for different devices containing InGaN multiple quantum wells.

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Section: The Origin Of the Emission Peaksmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Chen

Fang

et al. 2011

Journal of Applied Physics

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“…In parallel there has been growing interest in incorporating nanostructured ZnO into light-emitting devices, particularly for UV emission by combining n-type ZnO NRAs with an inorganic p-type materials such as GaN [24,25] , with recent reports of p-type organic materials being studied with the motivation of achieving all solution processed devices [26] . Despite promising initial results with emissive devices the inclusion of ZnO NRAs in light emitting diodes (LEDs) remains less developed than hPVs.…”

Section: Introductionmentioning

confidence: 99%

ZnO Nanorod Arrays as Electron Injection Layers for Efficient Organic Light Emitting Diodes

Faria

Campbell

McLachlan

2015

Adv Funct Materials

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Nanostructured oxide arrays have received significant attention as charge injection and collection electrodes in numerous optoelectronic devices. Zinc oxide (ZnO) nanorods have received particular interest owing to the ease of fabrication using scalable, solution processes with a high degree of control of rod dimension and density. Here we implement vertical ZnO nanorods as electron injection layers in organic light emitting diodes (OLEDs) for display and lighting purposes. Implementing our nanorods into devices with an emissive polymer, poly(9,9-dioctyluorene-altbenzothiadiazole) (F8BT) and poly(9,9-di-n-octylfluorene-alt-N-(4-butylphenyl)dipheny-lamine) (TFB) as an electron blocking layer, brightness and efficiencies up to 8600 cd/m 2 and 1.66 cd/A were achieved. We highlight simple solution processing methodologies combined with post-deposition thermal processing to achieve complete wetting of the nanorod arrays with the emissive polymer. The introduction of TFB to minimize charge leakage and non-radiative exciton decay results in dramatic increases to device yields and provides an insight into the operating mechanism of these devices. We demonstrate the detected emission originates from within the polymer layers with no evidence of ZnO band-2 edge or defect emission. The work represents a significant development for the ongoing implementation of ZnO nanorod arrays into efficient light emitting devices.

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“…One-dimensional inorganic nanostructures have been intensively studied recently with the interesting proper- ties of increased charge injection efficiency at the nanosize junctions and increased light-extraction efficiency in the wave-guide structures [24][25][26][27][28][29][30][31]. Compared to the thinfilm ILEDs, the inorganic nanowire (NW) structures possess inherent advantages for "soft" LEDs with its onedimensional configuration.…”

Section: Light-emitting Diodes (Leds)mentioning

confidence: 99%

Progress and Prospects in Stretchable Electroluminescent Devices

Wang

Lee

2017

Nanophotonics

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Stretchable electroluminescent (EL) devices are a new form of mechanically deformable electronics that are gaining increasing interests and believed to be one of the essential technologies for next generation lighting and display applications. Apart from the simple bending capability in flexible EL devices, the stretchable EL devices are required to withstand larger mechanical deformations and accommodate stretching strain beyond 10%. The excellent mechanical conformability in these devices enables their applications in rigorous mechanical conditions such as flexing, twisting, stretching, and folding.The stretchable EL devices can be conformably wrapped onto arbitrary curvilinear surface and respond seamlessly to the external or internal forces, leading to unprecedented applications that cannot be addressed with conventional technologies. For example, they are in demand for wide applications in biomedical-related devices or sensors and soft interactive display systems, including activating devices for photosensitive drug, imaging apparatus for internal tissues, electronic skins, interactive input and output devices, robotics, and volumetric displays. With increasingly stringent demand on the mechanical requirements, the fabrication of stretchable EL device is encountering many challenges that are difficult to resolve. In this review, recent progresses in the stretchable EL devices are covered with a focus on the approaches that are adopted to tackle materials and process challenges in stretchable EL devices and delineate the strategies in stretchable electronics. We first introduce the emission mechanisms that have been successfully demonstrated on stretchable EL devices. Limitations and advantages of the different mechanisms for stretchable EL devices are also discussed. Representative reports are reviewed based on different structural and material strategies. Unprecedented applications that have been enabled by the stretchable EL devices are reviewed. Finally, we summarize with our perspectives on the approaches for the stretchable EL devices and our proposals on the future development in these devices.

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Low‐Voltage UV‐Electroluminescence from ZnO‐Nanowire Array/p‐GaN Light‐Emitting Diodes

Cited by 294 publications

References 34 publications

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

ZnO Nanorod Arrays as Electron Injection Layers for Efficient Organic Light Emitting Diodes

Progress and Prospects in Stretchable Electroluminescent Devices

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