Low‐κ/Cu Cleaning and Drying

Reinhardt, Kitt; Reidy, Richard F.; Daviot, Jerome

doi:10.1002/9781118071748.ch10

Cited by 33 publications

(38 citation statements)

References 109 publications

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“…The atomic concentration of C, Si, and O is 16.6 ± 0.4%, 27.6 ± 0.2%, and 55.8 ± 0.6%, respectively. Compared to carbosiloxane films deposited using other techniques, the carbon concentration of the MLD film is within the typical range of 10–30%; it is also higher than that of films grown by inductively coupled plasma CVD (ICPCVD) using bistrimethylsilylmethane and oxygen but lower than those made by PECVD using trimethylsilane and CO 2 . To conclusively exclude the possibility of the underlying SiO 2 /Si substrate contributing to the total apparent Si signal, the MLD carbosiloxane films were also deposited on substrates precoated with 18 nm Al 2 O 3 films grown by ALD.…”

Section: Resultsmentioning

confidence: 99%

“…SiO 2 has been largely replaced by low dielectric constant (low-κ) materials to reduce the capacitance of the BEOL dielectric layer . Carbon-doped silica, also known as carbon-doped oxide (CDO), organosilicate, silicon oxycarbide, or carbosiloxane, comprises an important class of low-κ materials. − By introducing organic constituents with a lower dielectric constant, e.g. CH x groups, into a SiO 2 matrix, the SiO 2 network can be broken up, further reducing the κ value.…”

Section: Introductionmentioning

confidence: 99%

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Highly Stable Ultrathin Carbosiloxane Films by Molecular Layer Deposition

Zhou

Bent

2013

J. Phys. Chem. C

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Carbosiloxane thin films are grown by molecular layer deposition (MLD) using 1,2-bis[(dimethylamino)dimethylsilyl]ethane and ozone precursors. The films exhibit a constant growth rate per MLD cycle and saturation behavior in exposure times for both reactants. Fourier-transform infrared spectroscopic study reveals characteristic carbosiloxane vibrational absorptions. The deposition of carbosiloxane films is further confirmed by X-ray photoelectron spectroscopy, and the film composition is shown to be dependent on ozone exposure time. The carbosiloxane films exhibit excellent stability when treated with acid, base, and organic solvent. Thermal stability studies demonstrate that the films are stable to 400 °C, with little thickness loss even at 600 °C, which is comparable to carbosiloxane films deposited by other techniques.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Highly Stable Ultrathin Carbosiloxane Films by Molecular Layer Deposition

Zhou

Bent

2013

J. Phys. Chem. C

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“…The instability of Germanium dioxide (GeO 2 ) was a primary cause for the abandonment of Germanium (Ge) in favor of Silicon as the premier material platform for microelectronics [ 1 , 2 ]. Nevertheless, Ge still offers many unique properties for optoelectronic devices [ 3 , 4 , 5 , 6 , 7 , 8 ], especially for near-infrared applications [ 9 ].…”

Section: Introductionmentioning

confidence: 99%

Shallow V-Shape Nanostructured Pit Arrays in Germanium Using Aqua Regia Electroless Chemical Etching

et al. 2017

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Due to its high refractive index, reflectance is often a problem when using Germanium for optoelectronic devices integration. In this work, we propose an effective and low-cost nano-texturing method for considerably reducing the reflectance of bulk Germanium. To do so, uniform V-shape pit arrays are produced by wet electroless chemical etching in a 3:1 volume ratio of highly-concentrated hydrochloridric and nitric acids or so-called aqua regia bath using immersion times ranging from 5 to 60 min. The resulting pit morphology, the crystalline structure of the surface and the changes in surface chemistry after nano-patterning are all investigated. Finally, broadband near-infrared reflectance measurements confirm a significant reduction using this simple wet etching protocol, while maintaining a crystalline, dioxide-free, and hydrogen-passivated surface. It is important to mention that reflectance could be further reduced using deeper pits. However, most optoelectronic applications such as photodetectors and solar cells require relatively shallow patterning of the Germanium to allow formation of a pn-junction close to the surface.

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“…These otherwise readily form on mixed hydrophilic-hydrophobic surfaces and particle contamination results from residues left behind after evaporation. 39 After drying, the samples are immediately put in the load-lock of the reactor where they are continuously purged by oxygenfree N 2 gas. As an extra measure to assure an oxygen-free surface, a 4 min H-bake at 800 C was performed before the deposition.…”

Section: Methodsmentioning

confidence: 99%

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

Mohammadi

Boer

Nanver

2012

Journal of Applied Physics

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In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of pure boron (PureB-) layers grown by chemical-vapor deposition (CVD) from diborane (B 2 H 6 ) as gas source on a nonrotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions by applying the actual parabolic gas velocity and temperature gradient profiles in the reactor. These are calculated theoretically and also simulated with FLUENT software. The influence of an axial and lateral diffusion of diborane species and the validity of the model for laminar flow in experimental CVD processes are also treated. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface H-coverage, and reactor dimensions. By only adjusting these reactor/process parameters, the model was successfully transferred from the ASM Epsilon One to the Epsilon 2000 reactor which has totally different reactor conditions. The model's predictive capabilities have been verified by experiments performed at 700 C in these two different ASM CVD reactors. V C 2012 American Institute of Physics. [http://dx

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Low‐κ/Cu Cleaning and Drying

Cited by 33 publications

References 109 publications

Highly Stable Ultrathin Carbosiloxane Films by Molecular Layer Deposition

Highly Stable Ultrathin Carbosiloxane Films by Molecular Layer Deposition

Shallow V-Shape Nanostructured Pit Arrays in Germanium Using Aqua Regia Electroless Chemical Etching

An analytical kinetic model for chemical-vapor deposition of pureB layers from diborane

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