LPCVD of InN on GaAs(110) Using HN₃ and TMIn: Comparison with Si(100) Results

Abstract

Low-pressure chemical vapor deposition (LPCVD) of InN and laser-assisted LPCVD on GaAs(l 10) and Si(100) using HN 3 and trimethyl indium (TMIn) has been studied with XPS, UPS and SEM. Without 308-nm excimer laser irradiation, InN film was built on the GaAs but not on Si surface under the present low-pressure conditions. When the photon beam was introduced, InN films with In:N atomic ratio of 1.0-±0.1 and a thickness of more than 20 A (the limit of the electron escaping depth for the In3d X-ray photoelectrons) were formed on Si(100) surface. In both cases, the formation of surface nitrides at the initial film growth processes was clearly indicated in the XP spectra. The He(Il) UP spectra taken from InN films on GaAs and Si are nearly identical and agree well with the result of a pseudo-potential calculation for the InN valence band. The corresponding SEM pictures showed smooth InN films on GaAs(1 10), while grains with diameter of -100 nm were observed for InN on Si(100).

Reactions of Hydrazoic Acid on TiO2 Nanoparticles: an Experimental and Computational Study

“…HN 3 was prepared by acidification of NaN 3 with 50% H 3 PO 4 and purified with a train of cold traps maintained at dry ice and liquid nitrogen as described by Bu et al , The sample has to be handled with extreme care and safety precaution to avoid detonation which may occur unexpectedly. The purified HN 3 was stored in a Pyrex tube at dry ice temperature as a pure and clear liquid.…”

Adsorption Configurations and Reactions of Boric Acid on a TiO2 Anatase (101) Surface

“…Among these semiconductors, quantum dot (QD)-sensitized TiO 2 nanoparticles (by InP, InAs, PbS, and CdS, for example) have been well-examined , and showed evidence of electron transfer from quantum dots into the TiO 2 nanoparticles. We have done experimental and theoretical studies on the deposition of InN films of varying thickness on TiO 2 nanoparticle films fabricated by low-pressure organometallic chemical vapor deposition (OMCVD) near 700 K with continuous UV irradiation using hydrazoic acid (HN 3 ) and trimethylindium (TMIn), which are perhaps the most efficient precursors. – The resulting InN films on TiO 2 exhibit a broad UV/visible absorption between 390 and 800 nm, indicating a promising possibility for photovoltaic applications . For both dye- and QD-sensitized metal oxide solar cells, the anchoring group between the sensitizer and the metal oxide film plays a critical role.…”

Computational Study of Reaction Pathways for the Formation of Indium Nitride from Trimethylindium with HN3: Comparison of the Reaction with NH3 and That on TiO2 Rutile (110) Surface

“…The overall reaction exothermicity producing Ti−InN−O(a) + CH 4 (g) + 2CH 3 O(a) + N 2 (g) was predicted to be 195 kcal/mol, where Ti−InN−O(a) is an InN molecule adsorbed horizontally on the TiO 2 surface 18a. The gas−surface reaction of TMIn + HN 3 is therefore very exothermic and can occur easily on TiO 2 surfaces, as has been demonstrated experimentally by Wang and Lin. , …”

“…Indium nitride is an important III-nitride semiconductor with a stable wurtzite crystal structure; it has been used for visible optoelectronics, high-efficiency solar cell, and other potential applications. − This chemically stable and robust InN has a useful range of band gaps, 0.7−2.1 eV, which result from the crystallinity and quantum confinement effects. − Deposition of InN films of varying thickness on TiO 2 nanoparticle films has been demonstrated by low-pressure organometallic chemical vapor deposition (OMCVD) near 700 K with continuous UV irradiation using hydrazoic acid (HN 3 ) and trimethylindium (TMIn), which are perhaps the most efficient precursors. ,, The resulting InN films on TiO 2 exhibit a broad UV/visible absorption between 390 and 800 nm quite similar to that of Graetzel's “black” dye, indicating a promising possibility for photovoltaic applications 10c…”