2003
DOI: 10.1109/tsm.2002.807741
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LPCVD silicon nitride uniformity improvement using adaptive real-time temperature control

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Cited by 13 publications
(4 citation statements)
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“…In this case, the Peltier device transforms thermal energy into electrical energy by the Seebeck effect. The Electromotive Force E.M.F(V) is given by (7) where α, T h , and T c are the Seebeck coefficient and temperatures on the cold and hot sides of the Peltier.…”
Section: Peltier Thermoelectrical Equivalent Circuitmentioning
confidence: 99%
See 1 more Smart Citation
“…In this case, the Peltier device transforms thermal energy into electrical energy by the Seebeck effect. The Electromotive Force E.M.F(V) is given by (7) where α, T h , and T c are the Seebeck coefficient and temperatures on the cold and hot sides of the Peltier.…”
Section: Peltier Thermoelectrical Equivalent Circuitmentioning
confidence: 99%
“…Likewise, Refs. [6,7] perform uniformity temperature control for lithography processes based on adaptive control or standard PI controllers based on reduced-order models of the wafer thermal behavior.…”
Section: Introductionmentioning
confidence: 99%
“…They implemented it to improve the rapid thermal chemical vapor deposition (RTCVD). Grumpher et al 8 demonstrated an effective approach to improve uniformity using adaptive real‐time temperature control that enables model‐based optimization of the process temperature of low‐pressure chemical vapor deposition (LPCVD). These research studies mainly treated chemical vapor deposition steps of the thermal oxidation, diffusion, or dielectric deposition stages.…”
Section: Introductionmentioning
confidence: 99%
“…1). One application of this trimming is in chip-to-chip compensation of the natural thickness variation across a wafer, which is typically at the percent level or higher for growth via low pressure chemical vapor deposition 18 . The dry etch trimming can also be used to realize thickness differences of several tens of nanometers, enabling multi-project wafers in which different thicknesses are needed to target, for example, frequency combs operating in different spectral bands or other χ (3) nonlinear nanophotonic devices.…”
mentioning
confidence: 99%