LPE growth and characterization of n-type InAs

Harrison, Raymond; Houston, P.A.

doi:10.1016/0022-0248(86)90061-8

Cited by 15 publications

(10 citation statements)

References 9 publications

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“…On the other hand, the free-electron concentration remains almost constant from 20 to 200 K but shows a steep increase to become ten times around RT in the asgrown samples grown on p-type InAs substrates. This apparent increase in free-electron concentration is thought to be due to conduction in the InAs substrate, as was suggested by Harrison and Houston [8]. The constant freeelectron concentrations observed in the range of 20-200 K for the samples grown on the p-type InAs substrates at 200 and 250 1C, respectively, coincided with those in the samples grown on the SI GaAs substrates at the same temperatures.…”

supporting

confidence: 67%

Properties of low-temperature-grown InAs and their changes upon annealing

Shiba

Ikariyama

Takushima

et al. 2007

Journal of Crystal Growth

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supporting

confidence: 67%

Properties of low-temperature-grown InAs and their changes upon annealing

Shiba

Ikariyama

Takushima

et al. 2007

Journal of Crystal Growth

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“…4. Good correlation exists between this work and that presented in [7] and [8], particularly towards the high free carrier concentration regime. TESn has clearly been employed successfully as a source Sn for n-type doping of InAs, since intentional doping could be achieved over 2 orders of magnitude.…”

Section: Resultssupporting

confidence: 80%

“…the effect of surface accumulation is negligible [9]). Likewise, values presented in [8] are for homoepitaxial layers, hence their higher mobilities (it instructive to note that epitaxial layers grown in this study were heteroepitaxial with a lattice mismatch of 6.8 %, greatly influencing the mobility).…”

Section: Resultsmentioning

confidence: 97%

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Electrical characterisation of Sn doped InAs grown by MOVPE

Shamba

Botha

Krug

et al. 2008

Phys. Status Solidi (c)

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The feasibility of tetraethyl tin (TESn) as an n‐type dopant for InAs is investigated. The electrical properties of Sn doped InAs films grown on semi‐insulating GaAs substrates by MOVPE are extensively studied as a function of substrate temperature, V/III ratio, substrate orientation and TESn flow rate. Results from this study show that Sn concentrations can be controlled over 2 orders of magnitude. The Sn doped InAs layers exhibit carrier concentrations between 2.7 x 1017 and 4.7 x 1019 cm–3 with 77 K mobilities ranging from 12 000 to 1300 cm2/Vs. Furthermore, the influence of the variation of these parameters on the structural properties of InAs are also reported. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…44,45 One possible reason for the relatively low mobility compared to InAs layers might be the large density of stacking faults in our nanowires. Recently, Schroer and Petta 46 reported that with an increasing number of stacking faults, the mobility degrades.…”

Section: à3mentioning

confidence: 99%

Effect of Si-doping on InAs nanowire transport and morphology

Wirths¹,

Weis²,

Winden³

et al. 2011

Journal of Applied Physics

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The effect of Si-doping on the morphology, structure, and transport properties of nanowires was investigated. The nanowires were deposited by selective-area metal organic vapor phase epitaxy in an N 2 ambient. It is observed that doping systematically affects the nanowire morphology but not the structure of the nanowires. However, the transport properties of the wires are greatly affected. Room-temperature four-terminal measurements show that with an increasing dopant supply the conductivity monotonously increases. For the highest doping level the conductivity is higher by a factor of 25 compared to only intrinsically doped reference nanowires. By means of back-gate field-effect transistor measurements it was confirmed that the doping results in an increased carrier concentration. Temperature dependent resistance measurements reveal, for lower doping concentrations, a thermally activated semiconductor-type increase of the conductivity. In contrast, the nanowires with the highest doping concentration show a metal-type decrease of the resistivity with decreasing temperature.

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LPE growth and characterization of n-type InAs

Cited by 15 publications

References 9 publications

Properties of low-temperature-grown InAs and their changes upon annealing

Properties of low-temperature-grown InAs and their changes upon annealing

Electrical characterisation of Sn doped InAs grown by MOVPE

Effect of Si-doping on InAs nanowire transport and morphology

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