<span>Effect of limited oxygen gas flux on properties of Al-doped ZnO films</span>

Abstract

In this study, Al-doped ZnO thin films were sputter deposited on glass substrate as a function of limited oxygen gas inlet. The crystal structure, optical, and electrical properties of the films were characterized using X-ray diffraction, scanning electron microscopy, UV-Vis spectroscopy, and Hall measurement. High crystallinity was found in all AZO samples. Surface morphology presented small grain size of ~ 50 – 100 nm, and thickness of AZO thin films were maintained approximately at 280 nm. Average optical transmittance of AZO films was about 90% in the 450 – 600 nm region, and optical band-gap values varied from 3.327 to 3.380 eV. The electrical resistivity of AZO films decreased with an increasing amount of oxygen flux. These AZO films are quite appropriate for the perspective development of UV photodetectors as a central role absorbing components or n-type semiconducting layers.