<title>Chalcogenide inorganic resists as holographic recording media</title>

Abstract

In present paper the utilization of the two types of inorganic resists: Ag-chalcogenide glass (ChG) structures and thin ChG layers for holograms recording is discussed. The optical characteristics and photographic properties of this materials were investigated, the study of hologram relief formation in ChGAg and ChG layers have been made. Among the investigated ChG layers the As40S20Se40 have shown the most optimal characteristics for the hologram recording. Good mechanical strength and thermostability of ChG layers enabled to use the obtained phase relief holograms after additional treatment for the production of thermo-or photopolymer copies, or galvanic nickel deposition. The high quality polymer copies and nickel matrixes for mass production were obtained from the chalcogenide based master holograms. characteristics of the obtained phase-relief holograms and their copies were investigated.

Enhanced Dielectric Environment Sensitivity of Surface Plasmon-Polariton in the Surface-Barrier Heterostructures Based on Corrugated Thin Metal Films with Quasi-Anticorrelated Interfaces

“…The quasi-anticorrelated interfaces of plasmon-carrying film on the flat semiconductor substrate forming Schottky barrier were produced by laser interference lithography method [11] with the following technological stages: (i) layer-by-layer vacuum deposition of a thin metal film (Au) and a vitreous chalcogenide photoresist (As 40 S 30 Se 30 ) film on a flat semiconductor substrate (GaAs); (ii) the exposure of this pattern by the interference field of two beams of He-Ne ( λ =488 nm) lasers with period 200–800 nm; (iii) the subsequent chemical etching to form the 1D periodic array of chalcogenide wires on the surface of a flat Au film; (iv) the chemical removing (by the solution based on composition KJ) of open metal areas through the previously obtained mask; and finally, (v) the vacuum deposition of the top metal film.…”

“…Today, there are several techniques of forming a diffraction grating on the semiconductor substrate, namely, the laser-induced periodic surface structures [4], extreme ultraviolet lithography [5], electron beam lithography [6], ion beam lithography [7], nanoimprint technology [8], pulsed laser interference lithography [9], and laser interference lithography [10, 11]. The latter is well known and relatively cheap method that allows to form a planar periodicity on large areas.…”

“…On the one hand, a periodical metal film profiling leads to SPP excitation with Fano peak shape in the transmittance (photocurrent). On the other hand, a flat “metal/semiconductor” interface substantially reduces the surface recombination losses unlike the conventional technology [11]. Thus, the main advantages of such heterostructures are (i) the reducing of surface recombination losses that improves the photodetector properties in the case of the application of these heterostructures as active plasmonic sensors and (ii) the enhancing of the sensitivity of signal intensity in the spectral region near falling down side of Fano-like SPP resonance peak.…”

Design and Characterization of Surface Barrier Heterostructures Based on Multilayer Diffraction Grating for Optoelectreonic Devices

“…Äèôðàêö³éí³ ´ðàòêè íà ïîâåðõí³ GaAs (100) áóëè îòðèìàí³ ìåòîäîì ãîëîãðàô³÷íî¿ ôîòîë³-òîãðàô³¿ [2]. Íà ¿õ îñíîâ³ áàãàòîøàðîâ³ ñòðóê-òóðè âèãîòîâëÿëèñü øëÿõîì ïîåòàïíîãî òåð-ì³÷íîãî îñàäaeåííÿ òîíêèõ ìåòàëåâèõ (Au, Ag) òà ä³åëåêòðè÷íèõ (SiO x ) ïë³âîê, à òàêîae ñïîñî-áîì ìàãíåòðîííîãî ðîçïèëåííÿ ïë³âîê ²ÒÎ íà òåêñòóðîâàí³ (ÄÃ) ïîâåðõí³ (GaAs) ³ íà ïëîñê³ çðàçêè-ñóïóòíèêè ïðè ê³ìíàòí³é òåìïåðàòóð³ â îäí³é ñòà䳿 íàïèëåííÿ.…”