<title>Correction of the EUV mirror substrate shape by ion beam</title>

Abstract

In the paper first results of study of etching speed and RMS roughnesses depending on an incidence angle and energy of ions for Si and Cr/Sc materials are presented. Possibility of variation in parameters of etching process (the incidence angle, energy of ions and exposition time) allows to pick up the optimum mode providing high speed etching or the minimal development of a roughness of a surface.

<title>Manufacturing and investigation of objective lens for ultrahigh resolution lithography facilities</title>

“…First experimental results proof a possibility of application of ion-beam etching for high precision correction of substrates for EUV mirrors. More detailed results of the investigation are reported in Proceedings of the Conference [15]. …”