<title>Development of a 1- to 1.7-um image intensifier tube using a Generation III configuration</title>

Abstract

We present the development of a near infrared image intensifier tube based on a Generation III configuration. The photocathode driving this tube is based on a negativeelectron-affinity (NEA) InGaAs design. The surface and crystalline quality of the InGaAs active layer for this device is characterized by x ray diffraction (XRD), micro-Raman spectroscopy, energy dispersive x-rays (EDX), and Auger spectroscopy. Room temperature and 77K photoluminescence (PL) and transmission measurements indicate the near infrared responsivity (1 .2-1 .7 tm) of the InGaAs active layer. Reflection mode measurements of the photoresponse (PR) in an ultra high vacuum environment produced white light sensitivities of 100 .tA/1umen and quantum efficiencies of -1% for wavelengths of 1300-1 600 nm at 300 K. Sealed image tubes were created, and early sealed tube results show low quantum efficiencies ('-0. 1% @ 1 550 nm) due to nonoptimized active layer thickness.