The photorefractive properties of Sn 2 P 2 S 6 crystals doped with Te and Sb in the near-infrared wavelength range up to 1064 nm are reported. The main photorefractive parameters, i.e., two-wave mixing gain, effective electrooptic coefficient, diffusion length, concentration of traps, and response time, are compared with conventional nominally pure Sn 2 P 2 S 6 . Te-doped Sn 2 P 2 S 6 shows the fastest response with the smallest decrease of the photorefractive efficiency with increasing wavelength in the near infrared. Sb doping, on the other hand, inhibits photorefraction in the near infrared. Sn 2 P 2 S 6 :Te and Sn 2 P 2 S 6 :Sb crystals both show a high two-wave mixing gain ⌫ at 633 nm, and 10 and 20 cm −1 . Te-doped Sn 2 P 2 S 6 shows a photorefractive gain of 4.5 cm −1 at 1064 nm. Response times at 1064 nm of 20 ms have been measured for the intensity 6 W/cm 2 , which is 2 orders of magnitude shorter than in Rh-doped BaTiO 3 .