Abstract:For the first time, the rising low frequency relative intensity noise characteristic of semiconductor lasers is explained. Using a multi-mode rate equation analysis, it is shown that the magnitude and shape of the low frequency relative intensity noise is strongly dependent on the values of the differential carrier lifetime at threshold and other laser's parameters. It is further shown that a single mode laser will also exhibit enhanced low-frequency noise unless the side-mode suppression ratio is very high. T… Show more
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