2001
DOI: 10.1117/12.436664
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<title>Evaluation and comparison of the pattern-transfer-induced image placement distortions on e-beam projection lithography masks</title>

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Cited by 5 publications
(3 citation statements)
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“…[6,12] Some results were not surprising, such as higher pattern density resulting in larger process induced distortion. Contact levels with low pattern density have much less distortion than gate or wiring levels.…”
Section: Pattern and Materials Requirementsmentioning
confidence: 91%
See 1 more Smart Citation
“…[6,12] Some results were not surprising, such as higher pattern density resulting in larger process induced distortion. Contact levels with low pattern density have much less distortion than gate or wiring levels.…”
Section: Pattern and Materials Requirementsmentioning
confidence: 91%
“…The continuous membrane scatterer layers consisted of a TaSi layer etched using the ebeam resist as the masking layer. [6] Metrology is critical to NGL mask fabrication. At the MCoC, masks are inspected and measured with SEM (including transmission detection), image placement metrology, and defect inspection with both optical and e-beam inspection systems.…”
Section: Mask Fabricationmentioning
confidence: 99%
“…To fully evaluate the benefit of the lower stress silicon substrates in relation to image placement improvements, the dense half pattern was used. In past publications, the dense half pattern has been shown to be the worst case scenario for image placement distortion in EPL masks [6]. Image placement distortions for this type of membrane have a significant delta between the x and y-components due to the pattern density gradient.…”
Section: Mask Patterning and Metrologymentioning
confidence: 99%