&lt;title&gt;Fabrication of CMOS image sensors&lt;/title&gt;

Malinovich, Yacov; Koltin, E.; Choen, David; Shkuri, Moshe; Ben-Simon, Meir

doi:10.1117/12.347076

Cited by 3 publications

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“…In this paper we describe a project to assess the suitability of an existing 0.5 µm, 5 V, single poly, double metal (1P2M) process, for scientific imaging applications. The process was selected due to other reports of low dark signal and low defects 3 . In this paper we present a characterisation of two 128 × 128 pixel imaging devices and additional results from smaller 5 × 5 pixel test structures.…”

Section: Introductionmentioning

confidence: 99%

CMOS pixel structures optimised for scientific imaging applications

et al. 2007

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In this paper we present the results from a pilot project at e2v technologies to examine the performance of CMOS Active Pixel Sensors for scientific applications. We describe the characterisation of two prototype 128 × 128 pixel imaging devices with scanning circuitry, as well as 5 × 5 pixel test structures with further variation in pixel design. The main variation in the design is the type of photodiode. In this process two types of diode were available, a 'shallow' n+/p-well diode and 'deep' n-well/p-substrate diode. The characterisation includes the use of photon transfer curves to measure output responsivity and we quantify dark signal variations between pixel structures and reset noise levels. A source of additional dark signal is found to be light emission from the in-pixel transistors. We also present results from an optical characterisation of the stand alone devices, including QE response, MTF and PSF measurements. Finally we outline the considerations to produce such a device using a more advanced process with a smaller feature size.

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Section: Introductionmentioning

confidence: 99%