<title>High-power switching with electron-beam-controlled semiconductors</title>

Abstract

Measurements and model calculations on semi-insulating GaAs as material for optically and electron-beam controlled semiconductor switches have shown that the steady state current is a strongly nonlinear function of both the applied voltage and the radiation intensity. The nonlinear shape of these curves can be influenced over a wide range by doping with suitable deep acceptors or donors, a result which opens the possibility of " tailoring" the materials to meet specific demands. As an example, it is discussed how a current-controlled negative differential conductivity due to Cu-doping can be utilized for a fast (sub-nanosecond) e-beam controlled switch which operates at low dark current, high hold-off voltage and a forward resistance which lies considerably below the lock-on resistance.