&lt;title&gt;High-resolution noncontact thermal characterization of semiconductor devices&lt;/title&gt;

Christofferson, James; Vashaee, Daryoosh; Shakouri, Ali; Mélèse, P.

doi:10.1117/12.429354

Cited by 6 publications

(5 citation statements)

References 9 publications

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“…Those studies demonstrated a cooling power density of 93.8 W/cm for a 200-m-thick BiTe TE element (one of the thinnest TE elements found in the market, BiTe materials properties are collected from the Thermion company datasheet) [23]. The simulated results matched well with the reported value by the manufacturer [20]. This also conforms to the conclusion: 3-D silicon microrefrigerator has a higher cooling power density than conventional 1-D devices with the same thickness.…”

Section: Comparison Of Experiments and Simulationssupporting

confidence: 79%

“…We use differential thermocouples to measure the temperature difference: one thermocouple tip is on top of the device and the other one on the substrate far away from device. We tested temperature variation versus time of this set-up and got a maximum value of 0.05 C. The comparison of thermocouple measurements with the non-contact optical measurement technique was described in an earlier study [20]. Thermocouple data is accurate within 0.1 C. Even though the thermocouple is on the order of the microrefrigerator size, since the cooling power density is very large, heat conduction through thermocouple wires is negligible.…”

Section: Device Cooling Measurementmentioning

confidence: 99%

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Silicon Microrefrigerator

Zhang

Zeng

Shakouri

2006

IEEE Trans. Comp. Packag. Technol.

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We fabricated a silicon microrefrigerator on a 500-mu m-thick substrate with the standard integrated circuit (IC) fabrication process. The cooler achieves a maximum cooling of 1 degrees C below ambient at room temperature. Simulations show that the cooling power density for a 40 x 40 mu m(2) device exceeds 500 W/cm(2). The unique three-dimensional (3-D) geometry, current and heat spreading, different from conventional one-dimensional (1-D) thermoelectric device, contribute to this large cooling power density. A 3-D finite element electrothermal model is used to analyze non-ideal factors inside the device and predict its limits. The simulation results show that in the ideal situation, with low contact resistance, bulk silicon with 3-D geometry could cool similar to 20 degrees C with a cooling power density of 1000 W/cm(2) despite the low thermoelectric figure-of-merit (ZT) of the material. The large cooling power density is due to the geometry dependent heat and current spreading in the device. The non-uniformity of current and Joule heating inside the substrate also contributes to the maximum cooling of silicon microrefrigerator, exceeding 30% limit given in one-dimensional thermoelectric theory Delta T-max = 0.5ZT(c)(2) where T-c is the cold side temperature. These devices can be used c to remove hot spots on a chip. is the cold side temperature. These devices can be used to remove hot spots on a chip.

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Section: Comparison Of Experiments and Simulationssupporting

confidence: 79%

Section: Device Cooling Measurementmentioning

confidence: 99%

Silicon Microrefrigerator

Zhang

Zeng

Shakouri

2006

IEEE Trans. Comp. Packag. Technol.

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“…The thermoreflectance method for observing the change in reflectance with temperature change is widely known. [8][9][10][11][12][13][14][15][16][17][18] In these studies, lights in the visible light region are used. Thus, these lights are invasive for semiconductor devices in an operating state.…”

Section: Introductionmentioning

confidence: 99%

Thermal behavior analysis of interconnect structures of Si semiconductor devices using the temperature dependent reflectance of an incoherent light beam

Endo¹,

Midoh²,

Nakamura³

et al. 2018

Jpn. J. Appl. Phys.

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The amount of light reflected from the light-irradiated device varies depending on the surface temperature at that location. In this paper, we show that, by using an incoherent light beam with a noninvasive wavelength, it is possible to measure the temperature change of the interconnect structure with a size of µm order Si semiconductor devices. As a method of measuring the temperature change, lock-in thermography has been reported. However, it is difficult to measure the temperature change of the fine structure. The spatial resolution of this method is about 10 µm. Here, by using a noninvasive incoherent light beam, the spatial resolution of µm order is achieved. We applied this method to a 4-µm-wide interconnect test element group (TEG) device with a passivation film to observe the temperature change of the interconnect structure.

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“…Calibration for each material's thermoreflectance coefficient is necessary using an in-situ method [9][10][11], typically with an external heating source (e.g., micro-peltier device) and sensor (e.g., Microthermocouple).We have previously demonstrated that by cycling the device at various frequencies and with the use of [1] a fast fourier tansform (FFT) algorithm operating on a series of frames from a CCD camera, the magnitude and phase information of the thermal signal is obtained with good signal to noise (SNR). Analysis in the frequency domain is used to reduce broadband noise and is a convenient way to extract the small thermoreflectance signal.…”

Section: Differential Thermoreflectancementioning

confidence: 99%

“…Thermoreflectance imaging is a proven effective non contact, non-destructive thermal characterization method that is based on the very small (~10 -4 ) temperature dependence of material reflection coefficients. Temperature resolution to 10-50 mK has been demonstrated using this method [1][2][3][4][5][6][7][8]. Because thermoreflectance imaging uses visible light (e.g.…”

Section: Introductionmentioning

confidence: 99%

Transient Thermal Imaging Using Thermoreflectance

Maize

Christofferson

Shakouri

2008

2008 Twenty-Fourth Annual IEEE Semionductor Thermal Measurement and Management Symposium

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Lock-in thermoreflectance imaging has proven effective in obtaining thermal images of active electronic and optoelectronic devices with submicron spatial resolution and 10-50mK temperature resolution. Thermoreflectance systems that use a lock-in method capture the steady state thermal signal but provide limited information about the thermal transient. We present a simple time series thermoreflectance method based on pulsed box-car averaging and a novel differencing technique to obtain transient thermal images with millisecond and microsecond time resolution and submicron spatial resolution. The technique relies on precise adjustment of the phase between the pulsed thermal excitation of the device and the illumination pulse used to measure the thermoreflectance change on the device. The full thermal transient pattern is reconstructed and captured in a charge coupled device (CCD) camera in a matter of minutes. Images are presented of the time evolution of the thermal signals on 40x40, and 100x100 micron square gold heaters.

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<title>High-resolution noncontact thermal characterization of semiconductor devices</title>

Cited by 6 publications

References 9 publications

Silicon Microrefrigerator

Silicon Microrefrigerator

Thermal behavior analysis of interconnect structures of Si semiconductor devices using the temperature dependent reflectance of an incoherent light beam

Transient Thermal Imaging Using Thermoreflectance

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