2001
DOI: 10.1117/12.452558
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<title>Highly charged ion-secondary ion mass spectrometry (HCI-SIMS): toward metrology solutions for sub-100-nm technology nodes</title>

Abstract: The transition to semiconductor design nodes below 100 nm will create high demands on metrology solutions for the detection and chemical characterization of defects and particles throughout all processing steps. The compositional analysis of particles with sizes below about 20 nm is one particular challenge. We describe progress in the development of a highly charged ion based secondary ion mass spectrometry (HCI-SIMS) schemes aimed at addressing this challenge. Using ions like Xe 48+ as projectiles increases … Show more

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