<title>Hot-carrier effects in thin-film, p-channel, hydrogen-passivated polysilicon-on-insulator LDD MOSFETs</title>

Abstract

Hot-carrier stressing has been shown to degrade hydrogen-passivated p-channel polysilicon-on-oxide MOSFET's by two parallel degradation mechanisms. We observe hot-carrier-induced degradation of hydrogen passivation at grain boundaries through the creation of additional donor-type grain boundary states in the channel, as well as hot-electron trapping in the gate oxide. Due to the presence of both of these degradation mechanisms, p-channel polysilicon MOSFET's exhibit anomalous hot-carrier-induced degradation behavior that has not been observed in bulk p-MOSFET's.