&lt;title&gt;InAs/GaSb superlattices characterized by high-resolution x-ray diffraction and infrared optical spectroscopy&lt;/title&gt;

Fuchs, F.; Herres, N.; Schmitz, J.; Pavlov, Konstantin Mikhailovitch; Wagner, J.; Koidl, P.; Roslund, Jöran H.

doi:10.1117/12.218204

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“…The lattice mismatch between InAs and GaSb is only 0.62%, which is useful for producing quasi latticematched structures where overall device strain may be minimized. In contrast, GaSb grown on GaAs yields a mismatch of 7.3%, which can lead to high levels of defects and dislocations in the subsequent structure if measures are not taken to include transition layers or thick buffer layers which smooth the growth surface and reduce dislocations in the device [15,16]. Use of GaAs as a substrate for growth of infrared devices is attractive due to the availability of semi-insulating substrates which are very transparent throughout the infrared spectrum, having an absorption coefficient on the order of only 2 cm −1 .…”

Section: 27mentioning

confidence: 99%

High power mid-wave and long-wave infrared light emitting diodes

Koerperick¹

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High brightness light emitting diodes based on the InAs/GaSb superlattice material system have been developed for use in mid-wave and long-wave infrared optoelectronic systems. By employing a multiple-active region device configuration, high optical output has been demonstrated from devices in the 3-5 µm and 7-12 µm spectral bands. Mid-wave infrared optical output in excess of 0.95 mW/sr has been observed from 120×120 µm 2 devices with peak emission at 3.8 µm, and nearly 160 µW/sr has been measured from devices of the same size operating at 8 µm. Larger devices (1×1 mm 2) with output as high as 8.5 mW/sr and 1.6 mW/sr have been demonstrated with midwave and long-wave devices, respectively, under quasi-DC bias conditions. in the tunnel junctions.

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Section: 27mentioning

confidence: 99%

High power mid-wave and long-wave infrared light emitting diodes

Koerperick¹

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InAs/AlSb/GaSb heterostructures

Wagner

Schmitz

Fuchs

et al.

Advances in Solid State Physics

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Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices

et al. 1996

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We have studied InAs/GaSb superlattices (SLs) grown with either InSb-like or GaAs-like interfaces (IFs) on top of a GaSb buffer layer on (100) GaAs substrates. The InAs layer thickness was varied from 4 to 14 monolayers (ML) while the GaSb layer thickness was kept fixed at 10 ML. The type of IF bonds realized was verified by Raman scattering from mechanical IF modes. High-resolution X-ray diffraction using one- and two-dimensional mapping of symmetric and asymmetric reflections allowed us to determine independently the lattice parameters parallel and perpendicular to the growth direction. The GaSb buffer layer was found to be fully relaxed whereas the SLs with InSb-like IFs were coherently strained to the in-plane lattice parameter of the GaSb buffer for InAs layer thicknesses exceeding 6 ML. The strain distribution within the SLs with GaAs-like IFs was obtained from simulations of the X-ray reflection profiles. The SLs were found to be coherently strained close to the GaSb buffer and showed increasing strain relaxation with increasing distance from the buffer layer. In addition, these simulations provide an accurate determination of the SL periods. Well-resolved Raman spectra of backfolded longitudinal acoustic (LA) phonons were observed showing for SLs with ZnSb-like IFs folded LA phonon lines up to the seventh order. The spectrum of quasiconfined optical SL phonons was examined by Raman spectroscopy and by IR reflection. A detailed analysis of the IR reflection spectra allowed an independent determination of the individual layer widths within the SL stack, including the spatial extent of the GaAs-like IF mode

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<title>InAs/GaSb superlattices characterized by high-resolution x-ray diffraction and infrared optical spectroscopy</title>

Cited by 4 publications

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High power mid-wave and long-wave infrared light emitting diodes

High power mid-wave and long-wave infrared light emitting diodes

InAs/AlSb/GaSb heterostructures

Effect of interfacial bonding on the structural and vibrational properties of InAs/GaSb superlattices

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