&lt;title&gt;Infrared diode laser and laser-induced fluorescence diagnostics of an electron cyclotron resonance plasma etching tool&lt;/title&gt;

Woods, R. Claude; McClain, Robert L.; Mahoney, L.J.; Hartog, E. A. Den; Persing, H.; Hamers, J. S.

doi:10.1117/12.56655

Cited by 8 publications

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“…In experimental work, some physical parameters were successfully measured by electrostatic probes [4][5][6][7]. In addition, the ion kinetic energy and ion velocity distributions were obtained by Doppler-shifted LIF (laser induced fluorescence) at several points in the plasma bulk [8][9][10][11][12]. These experimental studies have provided a very reliable base for theoretical work.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional simulation of compact ECR plasma sources

Graves

Kilgore

1997

Plasma Sources Sci. Technol.

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In the present paper, argon plasma behaviour in a compact electron cyclotron resonance (ECR) plasma reactor is systematically studied by means of 2D simulation. Using a hybrid electron fluid-article ion plasma and particle neutral model, we have obtained the plasma potential, density, electron temperature, ionization rate, ion kinetic energy and velocity distributions and have found that the neutral gas pressure plays an important role in affecting all these distributions. In addition, non-uniform neutral gas depletion effects are examined by using a 2D Monte Carlo method. The depletion can obviously improve the plasma parameter uniformity. The average ion kinetic energy impacting on the substrate increases while the neutral gas pressure decreases. It is found that the plasma density is decreased by a factor of two and the profile becomes more uniform if non-uniform gas density is considered. Meanwhile, the ionization rate is sensitive to the non-uniform neutral density. The ion random kinetic energies of both the parallel and the perpendicular components are obtained and the ion rotating directed movement is observed. The perpendicular random energy near the top of the reactor can be much larger than that near the bottom.

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Section: Introductionmentioning

confidence: 99%

Two-dimensional simulation of compact ECR plasma sources

Graves

Kilgore

1997

Plasma Sources Sci. Technol.

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“…4͒. 13 Although it is noninvasive, LIF requires significant adjustment and is neither simple to use nor rugged. Therefore, it is not suitable for use as a control diagnostic.…”

Section: ϫ3mentioning

confidence: 99%

Diagnostics for plasma processing (etching plasmas) (invited)

Hershkowitz

Breun

1997

Review of Scientific Instruments

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Plasma processing diagnostics play two different roles—characterization and control. The goal of plasma characterization is to establish connections of data with external parameters and to verify models. The goal of control diagnostics is to make noninvasive in situ measurements of relevant processing parameters. Diagnostics used in semiconductor etching are considered. These include Langmuir probes, laser induced fluorescence, optical emission spectroscopy, infrared and Fourier transform infrared absorption spectroscopy, mass spectrometry, microwave interferometry, and radio frequency diagnostics. An example is given of the use of many diagnostics in characterizing SiO2 and Si etching by fluorocarbons.

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Design of High-Density Plasma Sources for Materials Processing

Lieberman

Gottscho

1994

Physics of Thin Films

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<title>Infrared diode laser and laser-induced fluorescence diagnostics of an electron cyclotron resonance plasma etching tool</title>

Cited by 8 publications

References 0 publications

Two-dimensional simulation of compact ECR plasma sources

Two-dimensional simulation of compact ECR plasma sources

Diagnostics for plasma processing (etching plasmas) (invited)

Design of High-Density Plasma Sources for Materials Processing

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