&lt;title&gt;Initial results from the EUV engineering test stand&lt;/title&gt;

Tichenor, Daniel A.; Ray-Chaudhuri, Avijit K.; Chapman, Henry N.; Replogle, William C.; Berger, Kurt W.; Stulen, R. H.; Kubiak, Glenn D.; Klebanoff, Leonard E.; Wronosky, John B.; O’Connell, Donna J.; Leung, Alvin H.; Jefferson, Karen J.; Ballard, W. P.; Hale, Layton C.; Blaedel, Kenneth L.; Taylor, John S.; Folta, James A.; Spiller, Eberhard; Soufli, Régina; Sommargren, Gary E.; Sweeney, Donald W.; Naulleau, Patrick; Goldberg, Kenneth A.; Gullikson, Eric M.; Bokor, Jeffrey; Attwood, David; Mickan, Uwe; Hanzen, Ralph M.; Panning, Eric M.; Yan, Pei-yang; Bjorkholm, J. E.; Gwyn, C. W.

doi:10.1117/12.450953

Cited by 20 publications

(9 citation statements)

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“…Full-field printing of high-resolution EUV images has been demonstrated in both static and step-and-scan mode in the ETS. [5][6][7][8][9][10][11] Two projection optics, POB1 and POB2 1,5 , have been fabricated for use in the ETS. These projection optics boxes are 4x reduction systems comprised of four multilayer mirrors yielding a numerical aperture of 0.1 at the wafer.…”

Section: Projection Optics In the Engineering Test Stand (Ets)mentioning

confidence: 99%

“…EUVL has been demonstrated for printing dense features below 50 nm without using resolution enhancement techniques (RETs). [5][6][7][8][9][10][11] In order to support the commercialization of EUV lithography, the EUV Engineering Test Stand (ETS) [5][6][7][8][9][10][11] has been developed as an alpha-class tool at the Virtual National Laboratory (VNL) funded by the EUV Limited Liability Companies (LLC). Full-field printing of high-resolution EUV images has been demonstrated in both static and step-and-scan mode in the ETS.…”

Section: Projection Optics In the Engineering Test Stand (Ets)mentioning

confidence: 99%

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Anisotropic EUV flare measured in the engineering test stand (ETS)

2004

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We demonstrate direct flare measurements of the 4-mirror projection optics in the Engineering Test Strand (ETS). By using a conventional resist clearing method, also called the Kirk method, flare was directly measured in the ETS. Although flare has been verified to be constant across the field in our study, different flare values have been observed in different directions. The flare anisotropic variation makes flare compensation more complicated, and it may even result in non-uniform CD changes in different directions. In order to fully identify the directional flare variations of the projection optics in the ETS, a special flare measurement feature, a spoke pattern, has been created. The spoke pattern has been used to measure flare in azimuthal directions (every 15 degrees), and rigorously measured flare in all directions is presented in this study. Measured flare is highest in horizontal direction and lowest in vertical direction. The azimuthal flare variation is believed to be due to anisotropic mirror polishing. Measured flare in all directions qualitatively agrees with the polishing signatures of individual mirrors in the measured optics.

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Section: Projection Optics In the Engineering Test Stand (Ets)mentioning

confidence: 99%

Section: Projection Optics In the Engineering Test Stand (Ets)mentioning

confidence: 99%

Anisotropic EUV flare measured in the engineering test stand (ETS)

2004

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“…In order to support the commercialization of EUVL, the EUV ETS [3][4][5][6][7] has been developed as an alpha-class tool at the Virtual National Laboratory (VNL) funded by the EUV Limited Liability Company (LLC). Full-field printing of high-resolution EUV images has been demonstrated in both static and step-and-scan mode in the ETS.…”

Section: Projection Optics In the Engineering Test Stand (Ets)mentioning

confidence: 99%

Lithographic flare measurements of EUV full-field projection optics

et al. 2003

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We demonstrate direct flare measurements of 4-mirror projection optics in the Engineering Test Stand (ETS) using a conventional resist clearing method (the Kirk method). Two extreme ultraviolet (EUV) lithographic projection optics, one with higher flare than the other, have been characterized and the results compared. The measured results have also been compared to analytical calculations based on measured mirror roughness and the extended point spread function (PSF). Full-field flare across the 24 mm field width has been measured, and we have verified that flare is constant across the field for EUV lithography as predicted. Horizontal (H) and vertical (V) flare bias has been observed and the cause of the H-V flare bias has been investigated. The main cause has been identified to be anisotropic mirror polishing. Simulations with the 2 dimensional Power Spectral density (PSD) function have confirmed the experimental results.

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“…Later, this light was supplied by deep ultraviolet 248 nm KrF and 193 nm ArF excimer lasers. Currently, lithography for 45-nm-technology nodes uses 193 nm light to From late 1990s until 2001, the Extreme Ultraviolet Limited Liability Company developed the first EUV full-field exposure tool, engineering test stand (ETS), to demonstrate the feasibility and capability of the method [8][9][10][11][12]. ETS is a vacuum-compatible step-and-scan system that has 4-mirrors, 4×-reduction, a ring-field design, a numerical aperture of 0.1, and print resolution of 70-100 nm.…”

Section: Introductionmentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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<title>Initial results from the EUV engineering test stand</title>

Cited by 20 publications

References 5 publications

Anisotropic EUV flare measured in the engineering test stand (ETS)

Anisotropic EUV flare measured in the engineering test stand (ETS)

Lithographic flare measurements of EUV full-field projection optics

Next-generation lithography for 22 and 16 nm technology nodes and beyond

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