&lt;title&gt;Loading effects in deep silicon etching&lt;/title&gt;

Karttunen, Jani; Kiihamäki, Jyrki; Franssila, Sami

doi:10.1117/12.396475

Cited by 77 publications

(45 citation statements)

References 11 publications

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“…In planar type discharges, this effect leads to an etch rate decrease and non-uniformity in etch rate for large area wafer surfaces [15,16]. This non-uniform etch rate effect in a coaxial type plasma reactor has never been studied.…”

Section: Etching Mechanism and Parameters In Coaxial Ar/cl 2 Plasmamentioning

confidence: 99%

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Etching mechanism of niobium in coaxial Ar/Cl₂ radio frequency plasma

Upadhyay

Popović

et al. 2015

Journal of Applied Physics

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The understanding of the Ar/Cl 2 plasma etching mechanism is crucial for the desired modification of inner surface of the three dimensional niobium (Nb) superconductive radio frequency cavities. Uniform mass removal in cylindrical shaped structures is a challenging task, because the etch rate varies along the direction of gas flow. The study is performed in the asymmetric coaxial RF discharge with two identical Nb rings acting as a part of the outer electrode. The dependence of etch rate uniformity on pressure, RF power, DC bias, Cl 2 concentration, diameter of the inner electrode, temperature of the outer cylinder and position of the samples in the structure is determined. To understand the plasma etching mechanisms, we have studied several factors that have important influence on the etch rate and uniformity, which include the plasma sheath potential, Nb surface temperature, and the gas flow rate.

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Section: Etching Mechanism and Parameters In Coaxial Ar/cl 2 Plasmamentioning

confidence: 99%

“…The etch rate non-uniformity is caused by the depletion of the reactants [16]. In the present experiment, two ring samples were placed at about 2.5 cm apart and the etch rates were measured at both rings with varied plasma conditions.…”

Section: E Etch Rate Non-uniformity Dependence On Various Process Pamentioning

confidence: 99%

Etching mechanism of niobium in coaxial Ar/Cl₂ radio frequency plasma

Upadhyay

Popović

et al. 2015

Journal of Applied Physics

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“…80% of the silicon should be removed. This is considered a high local loading in the DRIE process, and can make it hard to achieve straight walls in the fabricated structures [10]. However, the achieved structures show that we managed to obtain good results with this process, see Fig.…”

Section: ) Structures Fabricated By Driementioning

confidence: 94%

Fabrication of silicon-polymer composite acoustic matching layers for high frequency transducers

Nguyen

Manh

Hoff

et al. 2010

2010 IEEE International Ultrasonics Symposium

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We have used micromachining methods taken from the MEMS industry to fabricate acoustic matching layers for high frequency transducers. The matching layers are made as silicon-polymer composites, with acoustic impedance determined by the ratio between the two materials. Two different fabrication methods were used, anisotropic wet etch and deep reactive-ion etch (DRIE), and the composites were fabricated as both type 1-3 and 2-2 connectivity. These methods were used to fabricate structures suitable for a 15 MHz transducer. The resulting 2-2 composite has silicon width 4.5 µm and polymer width 18 µm, whereas the 1-3 composite has 7 µm wide posts and 9 µm spacing between posts. Both composites have 20% volume fraction of silicon, giving acoustic impedance 7 Mrayl. The acoustic behavior of the stack was investigated by FEM simulations, with emphasis on the composite layer. The simulations of pulse shape and bandwidth show that the stack should perform well as acoustic matching layers for high frequency transducers.

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“…3. The pattern is defined into silicon by utilizing an inductive-coupled-plasma (ICP) etcher that runs with the Bosch TM process (Karttunen et al 2000). The anisotropic etch of the silicon handle stops at the buried oxide, which offers a stop-mask in order to compensate for the etch nonuniformities.…”

Section: Fabrication Processmentioning

confidence: 99%

Multiple aspect-ratio structural integration in single crystal silicon (MASIS) for fabrication of transmissive MOEMS modulators

et al. 2007

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A novel fabrication process, named MASIS (multiple aspect ratio structural integration in single-crystal-silicon), is introduced for the implementation of singlecrystal-silicon microstructures characterized by distinct aspect ratios to be fabricated in the same device layer. The MASIS process was especially designed for fabrication of transmissive MOEMS (Micro-Opto-Electro-MechanicalSystems) modulators incorporating large field areas, and driven by long-stroke comb-drive actuators combined with folded suspensions. The comb-drive actuators were designed to achieve large amplitude of vibration and high natural frequencies, which allow large aperture areas at high operational frequency. The MASIS process consists of selective thinning of the device thickness in the shutter area, reducing payload mass, while preserving higher thickness of the suspension springs and comb-drive transducer fingers, thereby increasing the natural frequency of the device and reducing actuation voltages. A modulator was successfully fabricated, demonstrating maximum displacement of 50 lm at 1 kHz in resonance using an actuation voltage of 15 Vpp in air. The MOEMS modulator was adapted as integral part of a solid-state photodetection system to overcome the low-frequency noise.

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<title>Loading effects in deep silicon etching</title>

Cited by 77 publications

References 11 publications

Etching mechanism of niobium in coaxial Ar/Cl₂ radio frequency plasma

Etching mechanism of niobium in coaxial Ar/Cl₂ radio frequency plasma

Fabrication of silicon-polymer composite acoustic matching layers for high frequency transducers

Multiple aspect-ratio structural integration in single crystal silicon (MASIS) for fabrication of transmissive MOEMS modulators

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<title>Loading effects in deep silicon etching</title>

Cited by 77 publications

References 11 publications

Etching mechanism of niobium in coaxial Ar/Cl2 radio frequency plasma

Etching mechanism of niobium in coaxial Ar/Cl2 radio frequency plasma

Fabrication of silicon-polymer composite acoustic matching layers for high frequency transducers

Multiple aspect-ratio structural integration in single crystal silicon (MASIS) for fabrication of transmissive MOEMS modulators

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Product

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Etching mechanism of niobium in coaxial Ar/Cl₂ radio frequency plasma

Etching mechanism of niobium in coaxial Ar/Cl₂ radio frequency plasma