<title>Methods of determination of electric parameters of high-resistance layers with defects</title>

Abstract

This work reviews three methods for determination of various parameters of a layer with defects. The first method involves placing the investigated layer between metal electrodes. However, results obtained by this method are not always reliable. The other two methods employ principles of electrophotography for investigation of layer properties. These methods allow to perform measurements without changing layer properties. Measurements are much faster and more precise than using the first method. The results are repeatable, it is sufficient to perform measurements on a single sample, which is not damaged during the measurements. The second method allows detection of single defects in a layer. This method is used in the case of layers with resistance higher than 1016 per 1 cm2 of layer surface. The third method is used to measure properties of layers with resistance higher than iO Q per 1 cm2 of layer surface. The latter method allows easy determination of conditions when layer defects do not affect the measured parameters of the layers. This method is useful for investigation of layers with thickness ranging from a fraction of a micron to several hundreds of microns.