<title>Modeling of the carrier mobility at the silicon oxynitride-silicon interface</title>

Abstract

The main issue which is yet to be resolved in further developing the Surface Channel MOSFETs (SCMOSFETs) is understanding and eliminating detoriation of the carrier mobility at the insulator-semiconductor interface. The main factor causing this detoriation is hole and electron trapping-detrapping. One of the ways recently suggested of minimizing hole and electron trapping-detrapping at the Si-SiO2 interface involves replacing the SiO2 by silicon oxynitride (SiON). However degradation of MOSFETs, which have oxynitrides as gate dielectric, caused by trapping of hot electrons from the channel, is still found.