Patterning of fluorine-, hydrogen-, and carbon-containing SiO 2 -like low dielectric constant materials in highdensity fluorocarbon plasmas: Comparison with SiO 2The pattern transfer of SiO 2 hard masks into polytetrafluoroethylene, parylene-N, and poly͑arylene ether͒ ͑PAE-2͒ has been characterized in an inductively coupled plasma source. Selected results obtained with blanket parylene-AF4 films are included in this work. These dielectrics offer a relatively low dielectric constant ͑kϳ2-3͒ and are candidate materials for use as intra-and interlayer dielectrics for the next generations of high-speed electronic devices. Successful patterning conditions were identified for Ar/O 2 and N 2 /O 2 gas mixtures. It was found that the formation of straight sidewalls in Ar/O 2 discharges relies on the redeposition of oxygen-deficient etch products on the feature sidewall. Furthermore, the etch rates of parylene-N, parylene-F, and PAE-2 for blanket and patterned films could be captured by a semiempirical surface coverage model, which balances the adsorption rate of oxygen and the ion-induced desorption rate of oxygenated etch products.