2000
DOI: 10.1117/12.390070
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<title>Optimization of PHS-based chemically amplified negative resist for 100-kV electron-beam projection lithography (EPL)</title>

Abstract: Electron beam (EB) lithography has often been used for fabricating advanced ULSIs. Recently, to increase the throughput, EB projection lithography (EPL) has been proposed. If 100 kV acceleration voltage and 20 to 30 iA beam current are to be adopted in this technology, a high sensitivity resist will have to be developed to achieve a throughput of more than 30 wafers/hour (8"4). In this paper, we show the photoacid generator (PAG) optimization of a polyhydroxysterene (PHS) -based chemically amplified negative r… Show more

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