2000
DOI: 10.1117/12.382814
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<title>Photon recycling semiconductor light-emitting diode</title>

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Cited by 26 publications
(7 citation statements)
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“…An alternative downconversion material is another semiconductor itself [26]. In this case the phosphor is replaced by a second semiconductor active region, which absorbs some of the emission from the first (shorter-wavelength) semiconductor and subsequently re-emits a photon of longer wavelength.…”
Section: Photon Recycling Semiconductorsmentioning
confidence: 99%
See 1 more Smart Citation
“…An alternative downconversion material is another semiconductor itself [26]. In this case the phosphor is replaced by a second semiconductor active region, which absorbs some of the emission from the first (shorter-wavelength) semiconductor and subsequently re-emits a photon of longer wavelength.…”
Section: Photon Recycling Semiconductorsmentioning
confidence: 99%
“…The two semiconductor active regions were brought into close contact by an adhesion process. A portion of the 470 nm emission from the InGaN active region was absorbed by the second active region and was re-emitted as 630 nm photons [26].…”
Section: Photon Recycling Semiconductorsmentioning
confidence: 99%
“…White light can also be generated by photon recycling method without phosphor by combining the electroluminescence ͑EL͒ lights from GaN LED with photoluminescence ͑PL͒ lights from AlGaInP MQWs through wafer-bonding. 8 Lately, a few groups have reported on the different method for white color generation demonstrating that white PL emission can be obtained from laterally connected MQWs on three dimensional GaN templates grown by epitaxial lateral overgrowth ͑ELOG͒. [9][10][11] The white color PL emission was achieved by mixing PL emissions from InGaN QWs grown on triangular ELOG GaN films 9 and MQWs grown on trapezoidal GaN.…”
mentioning
confidence: 99%
“…Furthermore, guided-wave structures guides light propagation direction effectively, then light is not emitted equally into all directions, but is mostly along a particular axis, therefore the low light extraction efficiency arising from internal reflection is no longer existing, WSLD can obtain nearly 100% light extraction efficiency. To increase light extraction efficiency, chips are usually shaped in special ways [8][9] , but in our design, light extraction can be much more efficient without going to the trouble of shaping the chip.…”
Section: Introductionmentioning
confidence: 99%