<title>Preamplifier Noise In Indium Antimonide Detector Systems</title>

Abstract

Voltage noise measurements have been made at temperatures from 77 to 150 K with three JFET's and a preamplifier which closely resembles one used with InSb photovoltaic detectors. Noise minima were detected with the three JFET's at temperatures of 100 -115 K, but the level of voltage noise for two of the three JFET's was found to be below the noise level of InSb detector systems.