<title>Process monitoring using surface charge profiling (SCP) method</title>

Non-contact monitoring of electrical characteristics of silicon surface and near-surface region

“…Such annealing is known to reduce the positive fixed oxide charge. The same behavior of SCP measured charge was also observed for 60 A thermal oxides (15).…”

Surface photovoltage phenomena: theory, experiment, and applications

“…A key application is the in-line monitoring of various wafer cleaning steps [625±627], especially HF cleaning sequences. Other applications include the monitoring of surface metal contamination, investigation of surface stability (via time-resolved w measurements), and the investigation of oxide charge in oxidized Si wafers [626]. Another advantage of this approach is that because only low-intensity illumination is used, a possible in¯uence of the illumination on the measured results (via, e.g., surface photochemistry or photo-desorption) is ruled out [625,628].…”

Quantitative Estimation of the Metal-Induced Negative Oxide Charge Density in n-Type Silicon Wafers from Measurements of Frequency-Dependent AC Surface Photovoltage

“…Table I shows the concentrations of metal impurities on the surfaces of pretreated Si(001) for RCA-rinsed and Alcontaminated samples, as extracted by PEM 16) and analyzed by AAS. The extraction solution was used to dissolve the native oxide.…”

“…This paper is a supplementary article to a previous publication 1) in which the density of metal-induced negative oxide charge resulting on the surfaces of n-type silicon (Si) wafers rinsed with aluminum (Al)-or iron (Fe)-contaminated RCA alkaline solution 2) [Standard Clean 1 (SC-1)] was reported. These analyses in that study were based on frequency-dependent AC surface photovoltage (SPV) measurements [3][4][5][6][7][8][9][10][11][12][13][14][15][16] and related models. [7][8][9] In the previous paper, 1) the time-dependent and frequency-dependent AC SPV on Al-or Fe-contaminated n-type Si wafers were measured, and the Al-and Fe-induced negative oxide charge (metal-induced oxide charge: Q mi ) was found to be dominant compared with the fixed oxide charge (Q f ), interface-trapped charge (Q it ), oxide trapped charge (Q ot ), and mobile ionic charge (Q m ).…”