2000
DOI: 10.1117/12.390077
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<title>Progress in Mo/Si multilayer coating technology for EUVL optics</title>

Abstract: Extensive optimization on the fabrication of Mo/Si multilayer systems is canied out at the FOM InstituteRijnhuizen using e-beam evaporation. The process is being optimized including parameters such as variation of the mirror's centre wavelength, the metal fraction, deposition parameters, and the layer composition. Reflectivities of 69.5 % are demonstrated at normal incidence, with values of 67 to 69% being routinely achieved, demonstrating the capabilities of the deposition process. Some evidence of smoothenin… Show more

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Cited by 45 publications
(14 citation statements)
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“…The ML with suitable varying periodicity will be used for potential application in the wavelength range of 126-150Å. The 63% of reflectivity obtained is comparable with 69% peak reflectance reported on standard Mo/Si system [24]. The spectral width of ML-3 is 2.3 eV.…”
Section: Soft X-ray Performancesupporting
confidence: 55%
“…The ML with suitable varying periodicity will be used for potential application in the wavelength range of 126-150Å. The 63% of reflectivity obtained is comparable with 69% peak reflectance reported on standard Mo/Si system [24]. The spectral width of ML-3 is 2.3 eV.…”
Section: Soft X-ray Performancesupporting
confidence: 55%
“…We investigated a Mo/Si multilayer coating, deposited on superpolished Si substrate, a typical mirror as used for XUV lithography. The multilayer was deposited by e-beam evaporation in a UHV background of 1 × 10 −8 mbar, with post-deposition smoothing using low energy ion treatment [31][32][33][34][35]. The sample was pre-characterized by means of x-ray and XUV reflectometry.…”
Section: Methodsmentioning
confidence: 99%
“…The MoN/SiN multilayer coatings used in this work have been deposited on superpolished Si substrates using e-beam evaporation of Mo atoms and magnetron sputtering of Si atoms in a UHV background of 1×10 8 mbar, with post-deposition smoothing using low energy ion treatment of the Si layers [15][16][17][18]. Nitridation of the Mo and Si layers was achieved by low energy nitrogen ion treatment during deposition [19][20][21].…”
Section: Methodsmentioning
confidence: 99%