&lt;title&gt;Progress of the EUVL alpha tool&lt;/title&gt;

Meiling, H.; Benschop, Jos; Dinger, Udo; Kuerz, Peter

doi:10.1117/12.436675

Cited by 30 publications

(16 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…8 has a configuration similar to that used in existing EUV lithographic tools with a numerical aperture of 0.25 [34,35]. However, our result shows that high-quality imaging can be obtained at the higher numerical aperture of 0.3 as well.…”

Section: Discussioncontrasting

confidence: 49%

Network search method in the design of extreme ultraviolet lithographic objectives

Marinescu

Bociort

2007

Appl. Opt.

View full text Add to dashboard Cite

The merit function space of mirror system for extreme ultraviolet (EUV) lithography is studied. Local minima situated in the multidimensional optical merit function space are connected via links that contain saddle points and form a network. We present networks for EUV lithographic objective designs and discuss how these networks change when control parameters, such as aperture and field, are varied, and constraints are used to limit the variation domain of the variables. A good solution in a network, obtained with a limited number of variables, has been locally optimized with all variables to meet practical requirements.

show abstract

Section: Discussioncontrasting

confidence: 49%

Network search method in the design of extreme ultraviolet lithographic objectives

Marinescu

Bociort

2007

Appl. Opt.

View full text Add to dashboard Cite

show abstract

“…ASML (system integration), Carl Zeiss (optics), and their partners began to design and realize an alpha exposure tool in 2001 [13] and installed alpha-demo (AD) EUVL exposure tools at IMEC and SEMATECH North in 2006. This was a symbolic event that showed that EUVL was advancing toward industrial production.…”

Section: Introductionmentioning

confidence: 99%

“…The tool optics used six mirrors and 4× demagnifications. The maximum numerical aperture was designed to be 0.25 with a 50 nm resolution [13]. AD tool used a tin-discharge-produced plasma (DPP) EUV source [14].…”

Section: Introductionmentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

View full text Add to dashboard Cite

In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

show abstract

“…In 2006 two Alpha Demo Tools (ADT) have been shipped to R&D facilities at IMEC (Belgium) and the University of Albany (CSNE, NY, USA) [3,4,5,6]. In 2010 ASML has started the shipments of the second generation EUV system, the NXE:3100, to customers around the world and covering all main lithographic segments (DRAM, FLASH, LOGIC, MPU) [1,2,10] Both the ADT and the NXE:3100 system utilize optics with an NA of 0.25.…”

Section: Introductionmentioning

confidence: 99%

ASML's NXE platform performance and volume introduction

Peeters

Lok

Alphen

et al. 2013

Extreme Ultraviolet (EUV) Lithography IV

Self Cite

View full text Add to dashboard Cite

All six NXE:3100, 0.25 NA EUV exposure systems are in use at customer sites enabling device development and cycles of learning for early production work in all lithographic segments; Logic, DRAM, MPU, and FLASH memory. NXE EUV lithography has demonstrated imaging and overlay performance both at ASML and end-users that supports sub27nm device work. Dedicated chuck overlay performance of <2nm has been shown on all six NXE:3100 systems.The key remaining challenge is productivity, which translates to a cost-effective introduction of EUVL in high-volume manufacturing (HVM). High volume manufacturing of the devices and processes in development is expected to be done with the third generation EUV scanners -the NXE:3300B. The NXE:3300B utilizes an NA of 0.33 and is positioned at a resolution of 22nm which can be extended to 18nm with off-axis illumination. The subsystem performance is improved to support these imaging resolutions and overall productivity enhancements are integrated into the NXE platform consistent with 125 wph. Since EUV reticles currently do not use a pellicle, special attention is given to reticle-addeddefects performance in terms of system design and machine build including maintenance procedures.In this paper we will summarize key lithographic performance of the NXE:3100 and the NXE:3300B, the NXE platform improvements made from learning on NXE:3100 and the Alpha Demo Tool, current status of EUV sources and development for the high-power sources needed for HVM.Finally, the possibilities for EUV roadmap extension will be reviewed.

show abstract

<title>Progress of the EUVL alpha tool</title>

Cited by 30 publications

References 6 publications

Network search method in the design of extreme ultraviolet lithographic objectives

Network search method in the design of extreme ultraviolet lithographic objectives

Next-generation lithography for 22 and 16 nm technology nodes and beyond

ASML's NXE platform performance and volume introduction

Contact Info

Product

Resources

About